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IGP40N65F5

Trans IGBT Chip N-CH 650V 74A 250W 3-Pin(3+Tab) TO-220 Tube

Quantity Unit Price(USD) Ext. Price
1 $4.168 $4.17
200 $1.613 $322.60
500 $1.558 $779.00
1000 $1.529 $1,529.00

Inventory:6,662

*The price is for reference only.
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Overview of IGP40N65F5

Elevate your power supply, lighting, and motor control applications with the IGP40N65F5 power MOSFET transistor from Infineon Technologies. As part of the CoolMOS P7 series, this transistor offers unparalleled performance and energy efficiency. Boasting a drain-source voltage of 650V and a continuous drain current of 40A, the IGP40N65F5 is up for the challenge of high-power applications. Its low on-resistance of 70mΩ ensures optimal power management, while its high switching frequency capability guarantees fast and reliable operation. With a low gate charge of 82nC, the IGP40N65F5 minimizes switching losses and maximizes efficiency, all while housed in a TO-220 package for thermal stability and easy mounting. Trust the IGP40N65F5 to deliver exceptional performance across a wide range of industrial and automotive applications

Application

POWER CONTROL

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IGP40N65F5 Pbfree Code Yes
Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG Package Description ,
Reach Compliance Code compliant ECCN Code EAR99
Samacsys Manufacturer Infineon Case Connection COLLECTOR
Collector Current-Max (IC) 74 A Collector-Emitter Voltage-Max 650 V
Configuration SINGLE Gate-Emitter Thr Voltage-Max 4.8 V
Gate-Emitter Voltage-Max 20 V JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 175 °C Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 250 W Surface Mount NO
Terminal Finish TIN Terminal Form THROUGH-HOLE
Terminal Position SINGLE Transistor Application POWER CONTROL
Transistor Element Material SILICON Turn-off Time-Nom (toff) 200 ns
Turn-on Time-Nom (ton) 34 ns VCEsat-Max 2.1 V
Series TrenchStop® Package Tube
Product Status Active Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 74 A Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 40A Power - Max 255 W
Switching Energy 360µJ (on), 100µJ (off) Input Type Standard
Gate Charge 95 nC Td (on/off) @ 25°C 19ns/160ns
Test Condition 400V, 20A, 15Ohm, 15V Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole Package / Case TO-220-3
Supplier Device Package PG-TO220-3 Base Product Number IGP40N65

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