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HGTP12N60C3D

Ideal for motor control, power supplies, and other high-power electronic system

Quantity Unit Price(USD) Ext. Price
1 $6.920 $6.92
200 $2.678 $535.60
500 $2.585 $1,292.50
800 $2.538 $2,030.40

Inventory:8,431

*The price is for reference only.
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Overview of HGTP12N60C3D

Designed to meet the demands of high voltage switching applications, the HGTP12N60C3D is a sophisticated MOS gated device that combines the best attributes of MOSFETs and bipolar transistors. By maximizing the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor, this device offers superior performance and efficiency. With a relatively stable on-state voltage drop that only experiences moderate fluctuations between 25°C and 150°C, the HGTP12N60C3D ensures consistent operation even in challenging environmental conditions. Featuring the innovative IGBT TA49123 and anti-parallel diode TA49188, this product is optimized for applications requiring high voltage switching at moderate frequencies. The HGTP12N60C3D, previously known as Developmental Type TA49182, represents a cutting-edge solution for industries seeking reliable and energy-efficient switching components

Key Features

  • 500mA, 1000V at TC= 25°C
  • Ultra Low Leakage Current
  • Pulse Width Modulation
  • Flyback Diode
  • Soft Start Feature
  • Eddy-Current Optimization

Application

  • Sports
  • Retail
  • Transportation

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid HGTP12N60C3D Pbfree Code Yes
Part Life Cycle Code End Of Life Ihs Manufacturer ON SEMICONDUCTOR
Package Description FLANGE MOUNT, R-PSFM-T3 Manufacturer Package Code 340AT
Reach Compliance Code compliant ECCN Code EAR99
Samacsys Manufacturer onsemi Additional Feature RC-IGBT
Case Connection COLLECTOR Collector Current-Max (IC) 24 A
Collector-Emitter Voltage-Max 600 V Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 275 ns Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 150 °C Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 104 W Qualification Status Not Qualified
Surface Mount NO Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application POWER CONTROL Transistor Element Material SILICON
Turn-off Time-Max (toff) 675 ns Turn-off Time-Nom (toff) 480 ns
Turn-on Time-Nom (ton) 48 ns VCEsat-Max 2.2 V

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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