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HGTG30N60B3

600V 60A N-CH Trans IGBT Chip TO-247 Rail

Quantity Unit Price(USD) Ext. Price
1 $3.396 $3.40
200 $1.315 $263.00
450 $1.268 $570.60
900 $1.245 $1,120.50

Inventory:9,824

*The price is for reference only.
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Overview of HGTG30N60B3

The HGTG30N60B3 IGBT leverages the strengths of both MOSFETs and bipolar transistors to deliver high input impedance and low conduction losses. Ideal for high-voltage switching applications operating at moderate frequencies, this device excels in UPS, solar inverter, and power supply applications where efficiency is critical

Key Features

  • High Isolation Voltage
  • Low Leakage Current
  • Fast Response Time
  • High Accuracy
  • Low Noise Emissions
  • Reliable Maintenance

Application

  • Environmental Protection
  • Renewable Energy Sources
  • Smart Grid Technologies

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors RoHS Details
Technology Si Package / Case TO-247-3
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.45 V
Maximum Gate Emitter Voltage - 20 V, + 20 V Continuous Collector Current at 25 C 60 A
Pd - Power Dissipation 208 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series HGTG30N60B3
Brand onsemi / Fairchild Continuous Collector Current 60 A
Continuous Collector Current Ic Max 60 A Gate-Emitter Leakage Current +/- 250 nA
Height 20.82 mm Length 15.87 mm
Product Type IGBT Transistors Factory Pack Quantity 450
Subcategory IGBTs Width 4.82 mm
Part # Aliases HGTG30N60B3_NL Unit Weight 0.225401 oz

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