• GT50J301 TO-3P(LH)-3
GT50J301 TO-3P(LH)-3

GT50J301

IGBT Transistors 3PL IGBT PP2 GT50J301

Inventory:8,428

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for GT50J301 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of GT50J301

HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONSThe 3rd Generation Enhancement−Mode High Speed : tf= 0.30µs (Max.) Low Saturation Voltage : VCE (sat)= 2.7V (Max.) FRD Included Between Emitter and Collector

Key Features

HIGH SPEED

Application

POWER CONTROL

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors Technology Si
Package / Case TO-3P(LH)-3 Mounting Style Through Hole
Configuration Single Collector- Emitter Voltage VCEO Max 600 V
Maximum Gate Emitter Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series GT50J301
Brand Toshiba Continuous Collector Current Ic Max 50 A
Height 26 mm Length 20.5 mm
Product Type IGBT Transistors Subcategory IGBTs
Width 5.2 mm

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

ESM5045DV

ESM5045DV

4-Pin Tube Style Darlington Transistor with 175W Power Dissipation
IRF612

IRF612

Power MOSFET IRF612 designed for efficient switching operations with a maximum current of 2.6A and a resistance of 2.4ohm
ZVN4424G

ZVN4424G

Trans MOSFET N-CH 240V 0.5A Automotive 4-Pin(3+Tab) SOT-223
PHX9NQ20T

PHX9NQ20T

High-Power MOSFET for Railway Applications
STW25NM60ND

STW25NM60ND

STMICROELECTRONICS - STW25NM60ND - MOSFET Transistor, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
AT-32032

AT-32032

Transistors with both majority and minority charge carriers
T2535-800G-TR

T2535-800G-TR

T2535-800G-TR STMicroelectronics, TRIAC, 800V 25A, Gate Trigger 1.3V 35mA, 3-Pin D2PAK (TO-263)
MJD117T4

MJD117T4

Trans Darlington PNP 100V 2A 20000mW 3-Pin(2+Tab) DPAK T/R
2SA1162-GR,LF

2SA1162-GR,LF

Voltage rating: -50V
FMMT417TD

FMMT417TD

Transistor FMMT417TD: NPN Bipolar Junction Transistor with a Maximum Voltage Rating of 100V and Current Capacity of 0