• FDS8958A SOIC-8
FDS8958A SOIC-8

FDS8958A

N and P-Channel MOSFET transistor with a 30V voltage rating and maximum currents of 7A and 5A, housed in an 8-pin SOIC package on tape and reel

Quantity Unit Price(USD) Ext. Price
5 $0.186 $0.93
50 $0.164 $8.20
150 $0.154 $23.10
500 $0.141 $70.50
3000 $0.118 $354.00
6000 $0.115 $690.00

Inventory:9,657

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for FDS8958A using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of FDS8958A

The FDS8958A is a dual N-channel PowerTrench® MOSFET designed for various power management applications. This MOSFET features a low gate charge and low on-resistance, making it suitable for high-efficiency switching circuits and power conversion applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GATE1: Gate terminal for MOSFET 1
  • DRAIN1: Drain terminal for MOSFET 1
  • SOURCE1: Source terminal for MOSFET 1
  • GATE2: Gate terminal for MOSFET 2
  • DRAIN2: Drain terminal for MOSFET 2
  • SOURCE2: Source terminal for MOSFET 2
  • VSS: Ground connection
  • VCC: Positive power supply

Circuit Diagram

Incorporate a circuit diagram that illustrates the connections and operation of the FDS8958A MOSFET for a visual representation.

Key Features

  • Dual N-Channel MOSFET: Provides two independent N-channel MOSFETs for power management applications.
  • Low On-Resistance: The FDS8958A offers low on-resistance for reduced conduction losses and improved efficiency.
  • Low Gate Charge: Features low gate charge for fast switching performance.
  • High-Speed Switching: Suitable for high-frequency switching applications.
  • Thermal Performance: Designed for enhanced thermal performance and reliability.

Note: For detailed technical specifications, please refer to the FDS8958A datasheet.

Application

  • Power Management Systems: Ideal for use in power management systems, including voltage regulators and DC-DC converters.
  • Switching Circuits: Suitable for high-efficiency switching circuits in various electronic devices.
  • Power Conversion: Used in power conversion applications such as inverters and motor control.

Functionality

The FDS8958A is a dual N-channel PowerTrench® MOSFET designed for efficient power management and switching applications. It provides low on-resistance and fast switching performance, making it suitable for a wide range of power electronics applications.

Usage Guide

  • Power Supply: Connect VCC (Pin 7) to the positive power supply and VSS (Pin 6) to ground.
  • Gate Control: Apply appropriate gate voltages to GATE1 (Pin 1) and GATE2 (Pin 4) to control the switching of the MOSFETs.
  • Load Connection: Connect the load between DRAIN1 (Pin 2) and SOURCE1 (Pin 3) for MOSFET 1, and between DRAIN2 (Pin 5) and SOURCE2 (Pin 8) for MOSFET 2.

Frequently Asked Questions

Q: Is the FDS8958A suitable for high-frequency switching applications?
A: Yes, the FDS8958A is designed for high-speed switching, making it suitable for high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the FDS8958A:

  • FDS8880: This is a dual N-channel PowerTrench® MOSFET with similar characteristics and performance to the FDS8958A.
  • FDS6675: Another alternative, offering comparable features and performance for power management applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOIC-8 Transistor Polarity N-Channel, P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 7 A, 5 A Rds On - Drain-Source Resistance 28 mOhms, 52 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V, 3 V
Qg - Gate Charge 16 nC, 13 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2 W
Channel Mode Enhancement Series FDS8958A
Brand onsemi / Fairchild Configuration Dual
Fall Time 3 ns, 9 ns Forward Transconductance - Min 25 S, 10 S
Height 1.75 mm Length 4.9 mm
Product Type MOSFET Rise Time 5 ns, 13 ns
Factory Pack Quantity 2500 Subcategory MOSFETs
Transistor Type 1 N-Channel, 1 P-Channel Type MOSFET
Typical Turn-Off Delay Time 23 ns, 14 ns Typical Turn-On Delay Time 8 ns, 7 ns
Width 3.9 mm Part # Aliases FDS8958A_NL
Unit Weight 0.006596 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

FQT13N06LTF

FQT13N06LTF

The 4-Pin SOT-223 FQT13N06LTF MOSFET Transistor features an N-channel design, capable of handling currents up to 2.8 A and voltages up to 60 V
SI5618-TP

SI5618-TP

Power MOSFET suitable for applications requiring a P-channel device with high current-handling capabilities
CM300E3U-12H

CM300E3U-12H

POWER IGBT TRANSISTOR description
SI4963DY

SI4963DY

963DY MOSFET Transistor, Matched Pair, P-Channel, SO":
BC81725MTF

BC81725MTF

BC81725MTF: NPN General Purpose Amplifier Bipolar Transistor in SOT-23 Package
SSM6K504NU

SSM6K504NU

N-channel MOSFET Transistor with 30V and 9A rating in UDFN packaging
SI4154DY-T1-GE3

SI4154DY-T1-GE3

Si4154DY Series N-Channel 40 V 3.3 mOhm Surface Mount Power Mosfet - SOIC-8
RQ3L070ATTB

RQ3L070ATTB

The RQ3L070ATB MOSFET offers suitability for load-switching operations
RW1E025RPT2CR

RW1E025RPT2CR

performance dual P-Channel MOSFET
SQD50P06-15L_GE3

SQD50P06-15L_GE3

SQD50P06-15L_GE3 is an automotive-grade P-Channel MOSFET designed to operate at high temperatures