FCP20N60
The FCP20N60 is a top-tier N-Channel Power MOSFET employing SUPERFET® technology, ensuring efficient and easy drive operations
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Part Number : FCP20N60
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Package/Case : TO-220-3
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Brand : Onsemi
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Components Classification : Single FETs, MOSFETs
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Datesheet : FCP20N60 DataSheet (PDF)
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Series : FCP20N60
Overview of FCP20N60
Meet the FCP20N60 SuperFET® MOSFET from ON Semiconductor, revolutionizing high voltage super-junction technology with its innovative charge balance design. This MOSFET outshines the competition with its remarkable low on-resistance and reduced gate charge, ensuring minimal conduction loss and superior switching performance. With unmatched dv/dt rate and higher avalanche energy, the SuperFET MOSFET excels in various applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power. Experience the power and efficiency of SuperFET MOSFET for your next project
Key Features
- 800V @ Tj = 125°C
- Typ. Rds(on) = 200 mΩ
- Low Gate Leakage (Typ. Igs = 10 μA)
- High Immunity to Electrostatic Discharge (Typ. Vc = 1 kV)
- Typ. Rc = 300 Ω
- Ultra Low Input Capacitance (Typ. Ci = 10 pF)
Application
- Solar Inverter
- AC-DC Power Supply
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | Through Hole | Package / Case | TO-220-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 600 V | Id - Continuous Drain Current | 20 A |
Rds On - Drain-Source Resistance | 190 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 208 W | Channel Mode | Enhancement |
Series | FCP20N60 | Brand | onsemi / Fairchild |
Configuration | Single | Fall Time | 65 ns |
Forward Transconductance - Min | 17 S | Height | 16.3 mm |
Length | 10.67 mm | Product Type | MOSFET |
Rise Time | 140 ns | Factory Pack Quantity | 1000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | MOSFET | Typical Turn-Off Delay Time | 230 ns |
Typical Turn-On Delay Time | 62 ns | Width | 4.7 mm |
Unit Weight | 0.068784 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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