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FCH041N60F

N-Channel Trans MOSFET with 600V voltage rating and 76A current capacity

Inventory:7,348

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Overview of FCH041N60F

One of the key advantages of the SuperFET II MOSFET is its optimized body diode reverse recovery performance, which eliminates the need for additional components and ultimately improves system reliability. This feature sets it apart from other MOSFETs on the market, making it a top choice for engineers looking to maximize efficiency and performance in their power designs

Key Features

  • Ultra-low power consumption
  • Fast response time guaranteed
  • High-frequency switching capability
  • Low electromagnetic interference
  • Rugged and reliable design ensured
  • Efficient thermal dissipation achieved

Application

  • Efficient AC-DC Converter
  • Power Distribution Services
  • Advanced Energy Management

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series SuperFET® II Package Tube
Product Status Not For New Designs FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 76A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 41mOhm @ 38A, 10V Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 360 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 14365 pF @ 100 V Power Dissipation (Max) 595W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Supplier Device Package TO-247-3 Package / Case TO-247-3
Base Product Number FCH041

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Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

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