DXT5551-13
Product DXT5551-13
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
5 | $0.106 | $0.53 |
50 | $0.086 | $4.30 |
150 | $0.076 | $11.40 |
500 | $0.068 | $34.00 |
2500 | $0.062 | $155.00 |
5000 | $0.059 | $295.00 |
Inventory:5,323
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Part Number : DXT5551-13
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Package/Case : SOT89-3
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Brand : Onsemi
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Components Classification : Single Bipolar Transistors
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Datesheet : DXT5551-13 DataSheet (PDF)
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Series : DXT5551
The DXT5551-13 is a high-performance dual-channel RF transmitter IC designed for wireless communication applications. This IC features two independent channels with a frequency range of 315MHz, making it ideal for remote control and telemetry systems. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the DXT5551-13 IC for a visual representation. Note: For detailed technical specifications, please refer to the DXT5551-13 datasheet. Functionality The DXT5551-13 is a dual-channel RF transmitter IC that enables wireless communication in the 315MHz frequency range. It provides reliable and efficient data transmission for various applications. Usage Guide Q: What is the operating frequency range of the DXT5551-13? Q: Does the DXT5551-13 support encryption for secure data transmission? For similar functionalities, consider these alternatives to the DXT5551-13:Overview of DXT5551-13
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The DXT5551-13 operates in the 315MHz frequency range, providing reliable wireless communication.
A: The DXT5551-13 does not have built-in encryption features. For secure transmission, external encryption methods may be implemented.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | Bipolar Transistors - BJT | Transistor Polarity | NPN |
Configuration | Single | Collector- Emitter Voltage VCEO Max | 160 V |
Collector- Base Voltage VCBO | 180 V | Emitter- Base Voltage VEBO | 6 V |
Maximum DC Collector Current | 600 mA | Pd - Power Dissipation | 1 W |
Gain Bandwidth Product fT | 300 MHz | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Brand | onsemi / Fairchild |
DC Collector/Base Gain hfe Min | 80 at 1 mA, 5 V | Product Type | BJTs - Bipolar Transistors |
Subcategory | Transistors | Technology | Si |
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