• DTDG14GPT100 MPT3
DTDG14GPT100 MPT3

DTDG14GPT100

Featuring 300 units at 500 milliamps and a 2-volt output, the DTDG14GPT100 Digital Transistor boasts one NPN - Pre Biased transistor

Quantity Unit Price(USD) Ext. Price
1 $0.214 $0.21
10 $0.189 $1.89
30 $0.178 $5.34
100 $0.165 $16.50
500 $0.135 $67.50
1000 $0.131 $131.00

Inventory:7,619

*The price is for reference only.
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Overview of DTDG14GPT100

The DTDG14GPT100 is a high-performance power transistor designed for use in various electronic applications. This transistor is specifically optimized for power amplification, switching, and regulation tasks, making it suitable for a wide range of circuit designs.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector (C): Connects to the load or power supply
  • Base (B): Input for controlling the transistor's conductivity
  • Emitter (E): Ground connection
  • Collector (C): Connects to the load or power supply
  • Base (B): Input for controlling the transistor's conductivity
  • Emitter (E): Ground connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the DTDG14GPT100 transistor for a visual representation.

Key Features

  • High Power Handling Capacity: The DTDG14GPT100 can handle high power levels, making it suitable for power applications.
  • Low Saturation Voltage: This transistor exhibits low saturation voltage, reducing power loss and improving efficiency.
  • Fast Switching Speed: With fast switching characteristics, the DTDG14GPT100 enables quick transition between on and off states.
  • Temperature Stability: Designed for stable performance across a wide temperature range, ensuring reliability in varying conditions.

Note: For detailed technical specifications, please refer to the DTDG14GPT100 datasheet.

Application

  • Power Amplification: Ideal for use in power amplifier circuits for audio or RF applications.
  • Switching Circuits: Suitable for switching applications in power supplies, motor control, and more.
  • Voltage Regulation: Can be utilized in voltage regulator circuits to stabilize output voltages.

Functionality

The DTDG14GPT100 transistor is a reliable component for power-related tasks, providing efficient power handling and reliability in various electronic circuits.

Usage Guide

  • Collector Connection: Connect the load or power supply to the Collector (C) pin.
  • Base Control: Apply the appropriate input signal to the Base (B) pin to control the transistor's conductivity.
  • Emitter Grounding: Connect the Emitter (E) pin to the circuit ground for proper operation.

Frequently Asked Questions

Q: Is the DTDG14GPT100 suitable for high-frequency applications?
A: While primarily designed for power applications, the DTDG14GPT100 can also operate in moderate-frequency circuits effectively.

Equivalent

For alternative power transistor options with similar functionalities, consider the following:

  • DTDM14GPT200: A higher power handling version of the DTDG14GPT100 for increased performance.
  • DTDG14GPT50: A lower power variant with similar characteristics but optimized for lower power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer ROHM CO LTD
Part Package Code SC-62 Package Description SMALL OUTLINE, R-PSSO-F3
Pin Count 3 Reach Compliance Code not_compliant
ECCN Code EAR99 HTS Code 8541.29.00.75
Factory Lead Time 13 Weeks Samacsys Manufacturer ROHM Semiconductor
Additional Feature BUILT-IN BIAS RESISTOR Case Connection COLLECTOR
Collector Current-Max (IC) 1 A Collector-Emitter Voltage-Max 70 V
Configuration SINGLE DC Current Gain-Min (hFE) 300
JESD-30 Code R-PSSO-F3 JESD-609 Code e2
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN Power Dissipation Ambient-Max 2 W
Power Dissipation-Max (Abs) 2 W Qualification Status Not Qualified
Surface Mount YES Terminal Finish TIN COPPER
Terminal Form FLAT Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10 Transistor Application SWITCHING
Transistor Element Material SILICON Transition Frequency-Nom (fT) 80 MHz
VCEsat-Max 0.4 V

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