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DTC123JUAT106

Specifications of Product DTC123JUAT106 include '80@10mA

Quantity Unit Price(USD) Ext. Price
20 $0.025 $0.50
200 $0.022 $4.40
600 $0.020 $12.00
3000 $0.019 $57.00
9000 $0.018 $162.00
21000 $0.017 $357.00

Inventory:7,139

*The price is for reference only.
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Overview of DTC123JUAT106

The DTC123JUAT106 is a digital transistor with built-in resistors that is designed for use in various switching applications. It features a built-in bias resistor which eliminates the need for an external bias resistor, simplifying circuit design and reducing component count.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Base (B): Controls the input signal
  • Emitter (E): Ground connection
  • Collector (C): Output connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the DTC123JUAT106 digital transistor for a visual representation.

Key Features

  • Digital Transistor: The DTC123JUAT106 is a digital transistor suitable for switching applications.
  • Built-in Bias Resistor: Eliminates the need for an external bias resistor, simplifying circuit design.
  • Compact Package: Available in a compact and space-saving package.
  • High Reliability: Offers high reliability and performance in various applications.

Note: For detailed technical specifications, please refer to the DTC123JUAT106 datasheet.

Application

  • Switching Circuits: Ideal for use in various switching circuits where biasing is required.
  • Signal Control: Suitable for applications requiring signal control and amplification.
  • Logic Gates: Can be used in logic gate implementations for digital signal processing.

Functionality

The DTC123JUAT106 digital transistor with built-in resistors simplifies circuit design by integrating bias resistors within the package. It provides a convenient and space-efficient solution for switching applications.

Usage Guide

  • Base Connection: Connect the input signal to the Base (B) pin.
  • Ground Connection: Connect the Emitter (E) pin to the ground.
  • Output Connection: Use the Collector (C) pin for the output signal.

Frequently Asked Questions

Q: What is the purpose of the built-in bias resistor in the DTC123JUAT106?
A: The built-in bias resistor eliminates the need for an external resistor, simplifying circuit design and reducing component count.

Q: Can the DTC123JUAT106 be used in high-reliability applications?
A: Yes, the DTC123JUAT106 offers high reliability and is suitable for various applications requiring consistent performance.

Equivalent

For similar functionalities, consider these alternatives to the DTC123JUAT106:

  • DTC144EETL: Another digital transistor with built-in resistors, offering similar performance characteristics.
  • DTC114YETL: This digital transistor provides built-in bias resistors for easy circuit design and integration.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Not Recommended Ihs Manufacturer ROHM CO LTD
Part Package Code SC-70 Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3 Reach Compliance Code compliant
ECCN Code EAR99 Samacsys Manufacturer ROHM Semiconductor
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 21 Collector Current-Max (IC) 0.1 A
Collector-Emitter Voltage-Max 50 V Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80 JESD-30 Code R-PDSO-G3
JESD-609 Code e1 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.2 W Qualification Status Not Qualified
Surface Mount YES Terminal Finish TIN SILVER COPPER
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10 Transistor Application SWITCHING
Transistor Element Material SILICON Transition Frequency-Nom (fT) 250 MHz
VCEsat-Max 0.3 V

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