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DTC114EU3T106

NPN Digital Transistor with Built-in Bias Resistor, SOT-323 Package

Quantity Unit Price(USD) Ext. Price
20 $0.032 $0.64
200 $0.026 $5.20
600 $0.022 $13.20
3000 $0.021 $63.00
9000 $0.019 $171.00
21000 $0.018 $378.00

Inventory:7,657

*The price is for reference only.
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Overview of DTC114EU3T106

STMicroelectronics' DTC114EU3T106 digital transistor is a versatile and efficient component designed for the demands of modern electronics. Its NPN bipolar junction transistor design, with a maximum collector current of 100mA and a collector-emitter voltage of 50V, provides the performance needed for high-speed switching applications. The low saturation voltage of 0.3V at a collector current of 10mA ensures energy efficiency, making it an excellent choice for battery-powered devices and other applications where power consumption is a concern. The built-in bias resistor simplifies circuit design, while ESD protection up to 8kV enhances reliability in challenging environments. Housed in a small SOT-416 package, the DTC114EU3T106 allows for high-density mounting on PCBs, making it a practical choice for space-constrained designs

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Frequency - Transition 250 MHz
Power - Max 200 mW Mounting Type Surface Mount
Package / Case SC-70, SOT-323 Supplier Device Package UMT3
Base Product Number DTC114

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