• DTB123EKT146 SMT3
DTB123EKT146 SMT3

DTB123EKT146

50V 500mA transistors

Inventory:7,558

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Overview of DTB123EKT146

The DTB123EKT146 is a PNP digital transistor designed for use in switching applications. It features a compact SOT-23 surface mount package and is ideal for driving LEDs, relays, and other low-power devices in electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the DTB123EKT146 for a visual representation.

Key Features

  • PNP Digital Transistor: The DTB123EKT146 is a PNP transistor suitable for low-power switching applications.
  • Compact Package: Housed in an SOT-23 surface mount package, it offers space-saving benefits in circuit board design.
  • Reliability: With its robust construction, this transistor provides reliable switching performance in various electronic circuits.
  • Low Power Consumption: The DTB123EKT146 is designed for efficient power management in battery-operated devices.

Note: For detailed technical specifications, please refer to the DTB123EKT146 datasheet.

Application

  • LED Driver: Suitable for driving LEDs in lighting applications and display systems.
  • Switching Circuits: Ideal for use in low-power switching circuits for automation and control.
  • Sensor Interfaces: Can be used in sensor interface circuits for signal processing and conditioning.

Functionality

The DTB123EKT146 is a PNP digital transistor that acts as a switch, enabling control of current flow in electronic circuits. It is well-suited for driving low-power loads and providing switching capabilities.

Usage Guide

  • Emitter Connection: Connect the Emitter (E) pin to the ground or the load in the circuit.
  • Base Input: Apply the control signal or logic input to the Base (B) pin to control the transistor switching.
  • Collector Output: Connect the Collector (C) pin to the load or device being controlled in the circuit.

Frequently Asked Questions

Q: What is the maximum current rating of the DTB123EKT146?
A: The DTB123EKT146 has a maximum continuous collector current rating specified in the datasheet.

Q: Is the DTB123EKT146 suitable for high-frequency switching applications?
A: The DTB123EKT146 is designed for low-power switching applications and may have limitations in high-frequency switching scenarios. For high-frequency requirements, consider specialized transistors with faster switching characteristics.

Equivalent

For similar functionalities, consider these alternatives to the DTB123EKT146:

  • DTC123JETL: A similar PNP digital transistor with equivalent specifications and performance characteristics.
  • DTC114EETL: This PNP transistor offers comparable functionality and can be used as a substitute for the DTB123EKT146.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer ROHM CO LTD
Part Package Code SC-59 Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3 Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 53 Weeks, 1 Day
Samacsys Manufacturer ROHM Semiconductor Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.5 A Collector-Emitter Voltage-Max 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR DC Current Gain-Min (hFE) 39
JESD-30 Code R-PDSO-G3 JESD-609 Code e1
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP Power Dissipation-Max (Abs) 0.2 W
Qualification Status Not Qualified Surface Mount YES
Terminal Finish TIN SILVER COPPER Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING Transistor Element Material SILICON
Transition Frequency-Nom (fT) 200 MHz VCEsat-Max 0.3 V

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