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DSS2X160-01A

Rectifier Diode Schottky 100V 320A 4-Pin SOT-227B

Quantity Unit Price(USD) Ext. Price
1 $53.103 $53.10
30 $50.891 $1,526.73

Inventory:7,217

*The price is for reference only.
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Overview of DSS2X160-01A

The DSS2X160-01A is a dual LDMOS RF power transistor designed for high-power amplification applications. It features excellent linearity and efficiency, making it ideal for use in RF power amplifiers and transmitters.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GND: Ground connection
  • VDD: Drain voltage supply
  • GATE1: Gate terminal 1
  • GATE2: Gate terminal 2
  • RF OUT: RF output
  • GND: Ground connection
  • VDD: Drain voltage supply
  • GATE1: Gate terminal 1
  • GATE2: Gate terminal 2
  • RF IN: RF input

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the DSS2X160-01A transistor for a visual representation.

Key Features

  • Dual LDMOS RF Transistor: Features two LDMOS transistors in a single package, offering high power handling capabilities.
  • High Linearity: The DSS2X160-01A provides excellent linearity performance, essential for RF amplification in communication systems.
  • High Efficiency: This transistor delivers high efficiency in power amplification, reducing power consumption and heat generation.
  • Wide Frequency Range: Operates over a wide frequency range, suitable for various RF amplification applications.
  • Compact Package: Available in a compact and thermally efficient package for ease of integration in RF amplifier designs.

Note: For detailed technical specifications, please refer to the DSS2X160-01A datasheet.

Application

  • RF Power Amplifiers: Suitable for use in RF power amplifiers for wireless communication systems.
  • Transmitter Systems: Ideal for integration into transmitter systems for broadcasting and telecommunication applications.
  • RF Signal Booster: Used as an RF signal booster to enhance signal strength in RF transmission systems.

Functionality

The DSS2X160-01A dual LDMOS RF power transistor is designed to amplify RF signals with high linearity and efficiency, making it a reliable choice for RF power amplification applications.

Usage Guide

  • Power Supply: Connect VDD (Drain voltage supply) to the appropriate voltage source based on operational requirements.
  • RF Connections: Connect the RF input/output ports to the corresponding RF signal paths for amplification.
  • Gate Control: Apply appropriate gate signals to GATE1 and GATE2 for controlling the amplification process.

Frequently Asked Questions

Q: Is the DSS2X160-01A suitable for linear amplification applications?
A: Yes, the DSS2X160-01A offers excellent linearity, making it well-suited for linear RF amplification requirements.

Equivalent

For similar functionalities, consider these alternatives to the DSS2X160-01A:

  • MRF13750H: A high-power LDMOS transistor with comparable performance characteristics to the DSS2X160-01A.
  • BLF888A: This LDMOS RF power transistor offers similar power handling and efficiency features for RF amplification.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Schottky Diodes & Rectifiers RoHS Details
Product Schottky Diodes Mounting Style SMD/SMT
Package / Case SOT-227B-4 Configuration Dual Anode Common Cathode
Technology Si If - Forward Current 320 A
Vrrm - Repetitive Reverse Voltage 100 V Vf - Forward Voltage 980 mV
Ifsm - Forward Surge Current 1.4 kA Ir - Reverse Current 4 mA
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 150 C
Series DSS2X160-01 Brand IXYS
Height 9.6 mm Length 38.2 mm
Pd - Power Dissipation 410 W Product Type Schottky Diodes & Rectifiers
Factory Pack Quantity 10 Subcategory Diodes & Rectifiers
Termination Style Solder Pad Type Schottky Diode
Width 25.07 mm Unit Weight 1.058219 oz

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