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DMG2302U-7

N-Channel Enhancement MOSFET SOT-23 Diodes Inc DMG2302U-7 N-channel MOSFET Transistor, 4.2 A, 20 V, 3-Pin SOT-23

Quantity Unit Price(USD) Ext. Price
10 $0.043 $0.43
100 $0.038 $3.80
300 $0.035 $10.50
3000 $0.033 $99.00
6000 $0.031 $186.00
9000 $0.030 $270.00

Inventory:7,083

*The price is for reference only.
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Overview of DMG2302U-7

The DMG2302U-7 is an N-Channel enhancement mode field-effect transistor (FET) designed for use in power management and load switching applications. It features a compact and reliable design, making it suitable for a variety of electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • D: Drain
  • G: Gate
  • S: Source
  • NC: No Connection
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the DMG2302U-7 for a visual representation.

Key Features

  • Enhancement Mode FET: The DMG2302U-7 operates in the enhancement mode, providing low on-state resistance and high switching speed.
  • Low Threshold Voltage: With a low Vgs(th), this FET can be easily driven by logic level signals, making it suitable for battery-powered applications.
  • High Current Handling: This FET can handle significant current levels, making it suitable for power management and load switching.
  • Compact Package: Available in a compact SOT-23 package, offering space-saving benefits for PCB designs.
  • Low Power Consumption: The DMG2302U-7 offers low power dissipation, contributing to energy-efficient circuit designs.

Note: For detailed technical specifications, please refer to the DMG2302U-7 datasheet.

Application

  • Power Management: Ideal for use in power management circuits, such as voltage regulators and power supply control.
  • Load Switching: Suitable for controlling the on/off state of loads in electronic systems, such as LED drivers and motor control.
  • Battery-Powered Devices: Well-suited for battery-powered applications due to its low threshold voltage and low power consumption.

Functionality

The DMG2302U-7 is an N-Channel FET that operates in enhancement mode, providing efficient power management and load switching capabilities. It offers reliable performance in various electronic circuits.

Usage Guide

  • Connections: Connect the D (Drain) and S (Source) pins to the load or power supply, and apply the control signal to the G (Gate) pin to switch the FET on or off.
  • Drive Voltage: Ensure that the gate voltage does not exceed the specified maximum ratings to prevent damage to the FET.

Frequently Asked Questions

Q: What is the maximum current handling capability of the DMG2302U-7?
A: The DMG2302U-7 can handle a maximum continuous drain current as specified in the datasheet. Exceeding this rating may result in device failure.

Q: Can the DMG2302U-7 be directly driven by a microcontroller?
A: Yes, the DMG2302U-7 can be driven by logic level signals typically available from microcontroller outputs.

Equivalent

For similar functionalities, consider these alternatives to the DMG2302U-7:

  • DMP1045U: This is a similar N-Channel FET with enhanced performance characteristics and compatibility with a wide range of applications.
  • DMN10H120S: An N-Channel PowerTrench MOSFET offering comparable functionality and performance to the DMG2302U-7 in power management applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 4.2 A Rds On - Drain-Source Resistance 90 mOhms
Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 400 mV
Qg - Gate Charge 7 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.4 W
Channel Mode Enhancement Series DMG2302
Brand Diodes Incorporated Configuration Single
Fall Time 6.7 ns Product MOSFET Small Signal
Product Type MOSFET Rise Time 9.8 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 28.1 ns
Typical Turn-On Delay Time 7.4 ns Unit Weight 0.000282 oz

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