DMG2302U-7
N-Channel Enhancement MOSFET SOT-23 Diodes Inc DMG2302U-7 N-channel MOSFET Transistor, 4.2 A, 20 V, 3-Pin SOT-23
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
10 | $0.043 | $0.43 |
100 | $0.038 | $3.80 |
300 | $0.035 | $10.50 |
3000 | $0.033 | $99.00 |
6000 | $0.031 | $186.00 |
9000 | $0.030 | $270.00 |
Inventory:7,083
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Part Number : DMG2302U-7
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Package/Case : SOT23-3
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Brand : Diodes Incorporated
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Components Classification : Single FETs, MOSFETs
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Datesheet : DMG2302U-7 DataSheet (PDF)
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Series : DMG2302
The DMG2302U-7 is an N-Channel enhancement mode field-effect transistor (FET) designed for use in power management and load switching applications. It features a compact and reliable design, making it suitable for a variety of electronic circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the DMG2302U-7 for a visual representation. Note: For detailed technical specifications, please refer to the DMG2302U-7 datasheet. Functionality The DMG2302U-7 is an N-Channel FET that operates in enhancement mode, providing efficient power management and load switching capabilities. It offers reliable performance in various electronic circuits. Usage Guide Q: What is the maximum current handling capability of the DMG2302U-7? Q: Can the DMG2302U-7 be directly driven by a microcontroller? For similar functionalities, consider these alternatives to the DMG2302U-7:Overview of DMG2302U-7
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The DMG2302U-7 can handle a maximum continuous drain current as specified in the datasheet. Exceeding this rating may result in device failure.
A: Yes, the DMG2302U-7 can be driven by logic level signals typically available from microcontroller outputs.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 4.2 A | Rds On - Drain-Source Resistance | 90 mOhms |
Vgs - Gate-Source Voltage | - 12 V, + 12 V | Vgs th - Gate-Source Threshold Voltage | 400 mV |
Qg - Gate Charge | 7 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.4 W |
Channel Mode | Enhancement | Series | DMG2302 |
Brand | Diodes Incorporated | Configuration | Single |
Fall Time | 6.7 ns | Product | MOSFET Small Signal |
Product Type | MOSFET | Rise Time | 9.8 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 28.1 ns |
Typical Turn-On Delay Time | 7.4 ns | Unit Weight | 0.000282 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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