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DI110N15PQ

Trans MOSFET N-CH 150V 110A T/R

Inventory:7,850

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Overview of DI110N15PQ

N-Channel 150 V 110A (Tc) 56W (Tc) Surface Mount 8-QFN (5x6)

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active FET Type N-Channel
Technology Si Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 60A, 10V Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 77 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3700 pF @ 75 V Power Dissipation (Max) 56W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package 8-QFN (5x6) Package / Case PowerQFN 5x6
Base Product Number DI110N15 Manufacturer Diotec Semiconductor
Product Category MOSFET RoHS Details
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 150 V
Id - Continuous Drain Current 110 A Rds On - Drain-Source Resistance 8.8 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 51 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 56 W
Channel Mode Enhancement Tradename DI110N15PQ
Series DI110N Brand Diotec Semiconductor
Configuration Single Fall Time 11 ns
Forward Transconductance - Min 58 S Product Type MOSFET
Rise Time 23 ns Factory Pack Quantity 5000
Subcategory MOSFETs Transistor Type Power MOSFET
Typical Turn-Off Delay Time 118 ns Typical Turn-On Delay Time 131 ns
Unit Weight 0.007055 oz

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