DI048N04PQ2
MOSFET, Power QFN 5x6, 40V, 48A, N, 28W
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Part Number : DI048N04PQ2
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Package/Case : PowerQFN5x6
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Brand : Diotec Semiconductor
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Components Classification : FET, MOSFET Arrays
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Datesheet : DI048N04PQ2 DataSheet (PDF)
Overview of DI048N04PQ2
Mosfet Array 40V 48A (Tc) 27W (Tc) Surface Mount PG-TDSON-8-4
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Status | Active | Technology | Si |
Configuration | Dual | Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 48A (Tc) | Rds On (Max) @ Id, Vgs | 9.6mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2270pF @ 20V | Power - Max | 27W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Package / Case | PowerQFN 5x6 | Supplier Device Package | PG-TDSON-8-4 |
Base Product Number | DI048N04 | Manufacturer | Diotec Semiconductor |
Product Category | MOSFET | RoHS | Details |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 40 V |
Id - Continuous Drain Current | 48 A | Rds On - Drain-Source Resistance | 8 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1.8 V |
Qg - Gate Charge | 48 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 28 W |
Channel Mode | Enhancement | Tradename | DI048N04PQ2 |
Series | DI0XX | Brand | Diotec Semiconductor |
Fall Time | 2 ns | Forward Transconductance - Min | 24 S |
Product Type | MOSFET | Rise Time | 30 ns |
Factory Pack Quantity | 5000 | Subcategory | MOSFETs |
Transistor Type | Power MOSFET | Typical Turn-Off Delay Time | 19 ns |
Typical Turn-On Delay Time | 47 ns | Unit Weight | 0.007055 oz |
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