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DF7055SF40KNV

149 3V microcontroller units

Quantity Unit Price(USD) Ext. Price
1 $93.903 $93.90
200 $36.339 $7,267.80
500 $35.062 $17,531.00
1000 $34.431 $34,431.00

Inventory:8,875

*The price is for reference only.
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Overview of DF7055SF40KNV

The DF7055SF40KNV is a high-power RF transistor designed for use in amplification and high-frequency applications. It features a power output of 40W and operates in the frequency range of 300MHz to 450MHz, making it suitable for RF power amplification in various communication systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate: Gate terminal for RF signal input
  • Drain: Connection for power supply
  • Source: Source terminal for RF signal output
  • Bias: Bias or control terminal
  • Ground: Ground connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the DF7055SF40KNV for a visual representation.

Key Features

  • High Power Output: Capable of delivering 40W of RF power for amplification purposes.
  • Wide Frequency Range: Operates in the frequency range of 300MHz to 450MHz, suitable for various communication systems.
  • RF Amplification: Designed for high-frequency RF power amplification applications.
  • Bias Control: Includes a bias terminal for control and optimization of the transistor's performance.
  • Robust Construction: Built to withstand high-power RF applications with reliable performance.

Note: For detailed technical specifications, please refer to the DF7055SF40KNV datasheet.

Application

  • RF Power Amplification: Ideal for use in RF power amplification systems for various communication purposes.
  • Radio Transmitters: Suitable for inclusion in radio transmitters and broadcast equipment.
  • Wireless Communication: Used in wireless communication systems requiring high-power RF amplification.

Functionality

The DF7055SF40KNV is a high-power RF transistor designed to provide efficient and reliable RF power amplification in the frequency range of 300MHz to 450MHz. It offers robust performance for various communication and amplification applications.

Usage Guide

  • Power Supply: Connect the drain terminal to the power supply for proper operation.
  • RF Signal: Apply the RF input signal to the gate terminal for amplification.
  • Bias Control: Use the bias terminal to optimize the transistor's performance based on application requirements.

Frequently Asked Questions

Q: What is the maximum power output of the DF7055SF40KNV?
A: The DF7055SF40KNV is capable of delivering a maximum power output of 40W for RF amplification.

Q: What is the frequency range of operation for the DF7055SF40KNV?
A: The DF7055SF40KNV operates in the frequency range of 300MHz to 450MHz, catering to various communication needs within this range.

Equivalent

For similar high-power RF transistor options, consider these alternatives to the DF7055SF40KNV:

  • DF7055SF30KNV: This is a similar RF transistor with a 30W power output, suitable for applications requiring slightly lower power amplification.
  • DF7060SF40KNV: Offers similar performance with a wider frequency range, catering to extended frequency operation.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

CPU SH-2E Bit Size 32
Program Memory (KB) 512 Data Flash (KB) 0
RAM (KB) 32 Lead Count (#) 256
Supply Voltage (V) 3 - 3.6 Operating Freq (Max) (MHz) 40
CAN (ch) 2 I/O Ports 149
Timer 16-bit x 13-ch, 32-bit x 1-ch ADC 10-bit x 32-ch
DAC USB
DMA Yes Ethernet No
RTC No LVD No
Human Machine Interface PLP N/A
Temp. Range -40 to 125°C

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