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D2219UK

Semelab D2219UK Dual N-channel MOSFET Transistor, 2 A, 40 V, 8-Pin SOIC

Inventory:9,414

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Overview of D2219UK

The D2219UK MOSFET is a high-performance RF transistor with a drain-source voltage of 40V and a continuous drain current of 2A. With a power dissipation of 17.5W, this MOSFET is capable of operating in a frequency range of 1MHz to 2GHz, making it ideal for a wide range of RF applications. The transistor type RF FET is housed in an SOIC package with 8 pins and can withstand temperatures up to 200°C, ensuring reliable performance even in harsh environments

Key Features

  • Simple bias circuits
  • Low noise
  • High gain
  • Low reverse transfer capacitance

Application

  • Industrial
  • Communications & Networking
  • Power Management

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category RF MOSFET Transistors Transistor Polarity N-Channel
Technology Si Id - Continuous Drain Current 2 A
Vds - Drain-Source Breakdown Voltage 40 V Operating Frequency 1 GHz
Gain 10 dB Output Power 2.5 W
Maximum Operating Temperature + 150 C Mounting Style SMD/SMT
Package / Case SOIC-8 Brand Semelab / TT Electronics
Configuration Single Height 2.18 mm
Length 5.08 mm Pd - Power Dissipation 17.5 W
Product Type RF MOSFET Transistors Subcategory MOSFETs
Transistor Type DMOS FET Type RF Power MOSFET
Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1 V to 5 V
Width 4.06 mm

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