D2219UK
Semelab D2219UK Dual N-channel MOSFET Transistor, 2 A, 40 V, 8-Pin SOIC
Inventory:9,414
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Part Number : D2219UK
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Package/Case : SOIC-8
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Brand : TT ELECTRONICS
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Components Classification : RF FETs, MOSFETs
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Datesheet : D2219UK DataSheet (PDF)
Overview of D2219UK
The D2219UK MOSFET is a high-performance RF transistor with a drain-source voltage of 40V and a continuous drain current of 2A. With a power dissipation of 17.5W, this MOSFET is capable of operating in a frequency range of 1MHz to 2GHz, making it ideal for a wide range of RF applications. The transistor type RF FET is housed in an SOIC package with 8 pins and can withstand temperatures up to 200°C, ensuring reliable performance even in harsh environments
Key Features
- Simple bias circuits
- Low noise
- High gain
- Low reverse transfer capacitance
Application
- Industrial
- Communications & Networking
- Power Management
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | RF MOSFET Transistors | Transistor Polarity | N-Channel |
Technology | Si | Id - Continuous Drain Current | 2 A |
Vds - Drain-Source Breakdown Voltage | 40 V | Operating Frequency | 1 GHz |
Gain | 10 dB | Output Power | 2.5 W |
Maximum Operating Temperature | + 150 C | Mounting Style | SMD/SMT |
Package / Case | SOIC-8 | Brand | Semelab / TT Electronics |
Configuration | Single | Height | 2.18 mm |
Length | 5.08 mm | Pd - Power Dissipation | 17.5 W |
Product Type | RF MOSFET Transistors | Subcategory | MOSFETs |
Transistor Type | DMOS FET | Type | RF Power MOSFET |
Vgs - Gate-Source Voltage | 20 V | Vgs th - Gate-Source Threshold Voltage | 1 V to 5 V |
Width | 4.06 mm |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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