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CY7C1041D-10VXI

Advanced asynchronous memory solution offering high density and speed performance for a wide range of application

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Overview of CY7C1041D-10VXI

The CY7C1041D-10VXI is a high-speed CMOS static RAM organized as 1,048,576 words by 1 bit. It operates at a fast access time with low power consumption, making it ideal for various memory applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VCC: Power supply pin
  • GND: Ground pin
  • OE: Output Enable pin
  • WE: Write Enable pin
  • A0-A19: Address inputs
  • I/O0-I/O7: Data input/output pins
  • UB/U: Upper byte write enable pins
  • LB/L: Lower byte write enable pins

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the CY7C1041D-10VXI for a visual representation.

Key Features

  • High-Speed CMOS SRAM: Offers fast access times suitable for high-performance applications.
  • Low Power Consumption: Operates with low power requirements, making it energy-efficient.
  • Wide Operating Voltage Range: Supports a wide voltage range for flexible integration.
  • Byte-Writable: Allows individual byte write operations for efficient memory management.
  • Automatic Power-Down: Features automatic power-down when deselected, saving power.
  • Single Power Supply: Operates with a single power supply, simplifying system design.

Note: For detailed technical specifications, please refer to the CY7C1041D-10VXI datasheet.

Application

  • Embedded Systems: Suitable for use in embedded systems requiring fast and reliable memory access.
  • Telecommunication Equipment: Used in telecommunication equipment for data buffering and storage.
  • Industrial Control Systems: Ideal for industrial control systems needing high-speed memory solutions.

Functionality

The CY7C1041D-10VXI is a high-speed CMOS static RAM that provides reliable and efficient memory storage and retrieval for various electronic applications.

Usage Guide

  • Power Supply: Connect VCC (Pin X) to the power supply voltage.
  • Data Management: Utilize address lines (A0-A19) and data lines (I/O0-I/O7) for memory operations.
  • Control Signals: Use OE and WE pins to control read and write operations, respectively.

Frequently Asked Questions

Q: Is CY7C1041D-10VXI compatible with 5V systems?
A: Yes, CY7C1041D-10VXI is compatible with 5V systems, ensuring versatility in different applications.

Equivalent

For similar functionalities, consider these alternatives to CY7C1041D-10VXI:

  • AS6C1008: This is a 1Mb CMOS SRAM with similar features and specifications.
  • IS61LV25616: A 4Mb low-power CMOS SRAM offering extended memory capacity.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category SRAM RoHS Details
Memory Size 4 Mbit Organization 256 k x 16
Access Time 10 ns Interface Type Parallel
Supply Voltage - Max 5.5 V Supply Voltage - Min 4.5 V
Supply Current - Max 90 mA Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C Mounting Style SMD/SMT
Package / Case SOJ-44 Brand Infineon Technologies
Data Rate SDR Memory Type SDR
Moisture Sensitive Yes Number of Ports 1
Product Type SRAM Series CY7C1041D
Factory Pack Quantity 170 Subcategory Memory & Data Storage
Type Asynchronous

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