CEH2315-HF
High-performance power semiconductor device for reliable switching application
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 1 | $0.391 | $0.39 |
| 200 | $0.156 | $31.20 |
| 500 | $0.151 | $75.50 |
| 1000 | $0.148 | $148.00 |
Inventory:6,978
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : CEH2315-HF
-
Package/Case : TSOP-6
-
Brand : Comchip Technology
-
Components Classification : Single FETs, MOSFETs
-
Datesheet : CEH2315-HF DataSheet (PDF)
Overview of CEH2315-HF
P-Channel 30 V 5A (Ta) 2W Surface Mount 6-TSOP
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Status | Active | FET Type | P-Channel |
| Technology | Si | Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3.8A, 10V | Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11.2 nC @ 10 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 15 V | Power Dissipation (Max) | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
| Supplier Device Package | 6-TSOP | Package / Case | TSOP-6 |
| Manufacturer | Comchip Technology | Product Category | MOSFET |
| RoHS | Details | Mounting Style | SMD/SMT |
| Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V | Id - Continuous Drain Current | 5 A |
| Rds On - Drain-Source Resistance | 50 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V | Qg - Gate Charge | 11.2 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 2 W | Channel Mode | Enhancement |
| Brand | Comchip Technology | Configuration | Single |
| Fall Time | 6 ns | Product Type | MOSFET |
| Rise Time | 4 ns | Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs | Typical Turn-Off Delay Time | 36 ns |
| Typical Turn-On Delay Time | 10 ns |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
NTMFD4C86NT1G
NTMFD4C86NT1G is a MOSFET designed for high-performance applications
MRF587
NPN type, capable of handling high currents and voltages ( character
2SA1535A
Transistors (BJT) - Single
IXYN80N90C3H1
High-power IGBT IXYN80N90C3H1AH
BLF881,112
Radio Frequency Field-Effect Transistor (RF FET) based on LDMOS technology, with a voltage rating of 104V and a gain of 21dB, packaged in SOT467C
FQD18N20V2TM
15A high current capacity QFET®
IXGH24N60B
Model IXGH24N60B, a HIPERFAST IGBT Transistor rated at 600V and 48A
MRF8372
Bipolar Transistor for RF Communication Devices
RE1J002YNTCL
Quickly ship RoHS-compliant product, discontinued in 2022
IRF3710STRLPBF
IRF3710STRLPBF MOSFET from Infineon, RL version