• BUR51 TO-3
BUR51 TO-3

BUR51

Bipolar Transistors - BJT NPN High Current

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Overview of BUR51

The BUR51 is a high-voltage NPN silicon power transistor designed for power switching applications.This transistor offers high voltage and current capability,making it suitable for use in power supply circuits,amplifiers,and motor control systems.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • E:Emitter
  • B:Base
  • C:Collector

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BUR51 transistor for a visual representation.

Key Features

  • High Voltage Capability:The BUR51 can withstand high voltages,making it suitable for high-power applications.
  • High Current Rating:With its high current handling capacity,this transistor can drive large loads efficiently.
  • Low Saturation Voltage:The BUR51 features a low saturation voltage,leading to reduced power dissipation and improved efficiency.
  • Fast Switching Speed:The transistor offers fast switching speeds,allowing for rapid on-off transitions in switching circuits.
  • Robust Construction:Built with silicon material and high-quality construction,the BUR51 ensures reliability and durability in operation.

Note:For detailed technical specifications,please refer to the BUR51 datasheet.

Application

  • Power Supply Systems:The BUR51 is commonly used in power supply systems for voltage regulation and power switching.
  • Motor Control:This transistor can be employed in motor control circuits for driving and controlling the speed of motors.
  • Audio Amplifiers:Suitable for use in audio amplifier circuits for amplifying audio signals with high power.

Functionality

The BUR51 is a robust power transistor capable of handling high voltages and currents.It provides efficient power switching capabilities for various electronic applications.

Usage Guide

  • Connection:Connect the Emitter,E,to the ground or common reference voltage,the Collector,C,to the load,and the Base,B,to the control signal source.
  • Voltage and Current:Ensure that the voltage and current requirements of the load do not exceed the specifications of the BUR51 transistor.
  • Heat Dissipation:Provide adequate heat sinking or cooling measures to dissipate heat generated during operation.

Frequently Asked Questions

Q:Can the BUR51 be used in high-power amplifier circuits?
A:Yes,the BUR51's high current rating and voltage capability make it suitable for use in high-power amplifier applications.

Equivalent

For similar functionalities,consider these alternatives to the BUR51:

  • BUT11A:A high-voltage NPN transistor with similar specifications to the BUR51 for power switching applications.
  • BUV48A:This silicon NPN power transistor offers comparable high voltage and current characteristics to the BUR51.

BUR51

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid BUR51 Rohs Code Yes
Part Life Cycle Code Obsolete Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-204AA Package Description METAL, TO-3, 2 PIN
Pin Count 2 Reach Compliance Code not_compliant
ECCN Code EAR99 HTS Code 8541.29.00.95
Case Connection COLLECTOR Collector Current-Max (IC) 60 A
Collector-Emitter Voltage-Max 200 V Configuration SINGLE
DC Current Gain-Min (hFE) 15 JEDEC-95 Code TO-3
JESD-30 Code O-MBFM-P2 JESD-609 Code e3
Number of Elements 1 Number of Terminals 2
Operating Temperature-Max 200 °C Package Body Material METAL
Package Shape ROUND Package Style FLANGE MOUNT
Polarity/Channel Type NPN Power Dissipation Ambient-Max 350 W
Power Dissipation-Max (Abs) 350 W Qualification Status Not Qualified
Surface Mount NO Terminal Finish TIN
Terminal Form PIN/PEG Terminal Position BOTTOM
Transistor Application SWITCHING Transistor Element Material SILICON
Transition Frequency-Nom (fT) 16 MHz Turn-off Time-Max (toff) 2600 ns
Turn-on Time-Max (ton) 1000 ns VCEsat-Max 1.5 V

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