BU508AW
Trans GP BJT NPN 700V 8A 125000mW 3-Pin(3+Tab) TO-247 Tube
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $2.346 | $2.35 |
10 | $2.096 | $20.96 |
30 | $1.938 | $58.14 |
100 | $1.777 | $177.70 |
500 | $1.704 | $852.00 |
1000 | $1.673 | $1,673.00 |
Inventory:3,718
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : BU508AW
-
Package/Case : TO-247-3
-
Brand : ST
-
Components Classification : Single Bipolar Transistors
-
Datesheet : BU508AW DataSheet (PDF)
-
Series : BU508AW
Overview of BU508AW
A standout feature of the BU508AW is its adoption of cutting-edge technology, setting it apart from traditional components in the market. The incorporation of a new high voltage structure enhances the overall functionality and efficiency of the horizontal deflection stage. This forward-thinking approach speaks volumes about the dedication of the manufacturers to stay ahead of the curve and provide customers with top-tier products
Key Features
- New generation technology
- Advanced manufacturing process
- High reliability design
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | BU508AW | Part Life Cycle Code | Active |
Ihs Manufacturer | STMICROELECTRONICS | Part Package Code | TO-247 |
Package Description | ROHS COMPLIANT PACKAGE-3 | Pin Count | 3 |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 22 Weeks | Samacsys Manufacturer | STMicroelectronics |
Collector Current-Max (IC) | 8 A | Collector-Emitter Voltage-Max | 700 V |
Configuration | SINGLE | DC Current Gain-Min (hFE) | 5 |
JEDEC-95 Code | TO-247 | JESD-30 Code | R-PSFM-T3 |
JESD-609 Code | e3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Temperature-Max | 150 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Polarity/Channel Type | NPN |
Power Dissipation-Max (Abs) | 125 W | Qualification Status | Not Qualified |
Surface Mount | NO | Terminal Finish | MATTE TIN |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![BUX98A](/files/uploads/product/s/d3ab7f17-505c-41f3-2362-08dbb33edd15.webp)
BUX98A
30A, 450V, NPN, Si, POWER TRANSISTOR, TO-3, TO-3, 2 PIN
![BUT92](/files/uploads/product/s/04d29bbe-d15d-42fa-64fe-08dbc6589f1f.webp)
BUT92
Compact, rugged power transistor featuring high voltage tolerance and ultra-low noise operation
![BUF410A](/img/package/to247.jpg)
BUF410A
TO-247 Plastic/Epoxy Transistor
![BUL58D](/img/package/to220.jpg)
BUL58D
Trans GP BJT NPN 450V 8A 85000mW 3-Pin(3+Tab) TO-220AB Tube
![BUL1102EFP](/img/package/to220f.jpg)
BUL1102EFP
NPN 450V 4A Power Bipolar Junction Transistor in TO-220FP Package
![BUX98A](/files/uploads/product/s/d3ab7f17-505c-41f3-2362-08dbb33edd15.webp)
BUX98A
30A, 450V, NPN, Si, POWER TRANSISTOR, TO-3, TO-3, 2 PIN
![IRF7316PBF](/img/package/soic8.jpg)
IRF7316PBF
High voltage P-Channel MOSFET with dual design and 20V max VGS
![IRFB260NPBF](/img/package/to220.jpg)
IRFB260NPBF
With a high current rating of 56A, MOSFET IRFB260NPBF is ideal for industrial and automotive applications
![STD5NM60T4](/img/package/dpak2.jpg)
STD5NM60T4
DPAK-packaged MDmesh Power MOSFET featuring N-Channel operation at 600V with a typical resistance of 0.9 Ohms and a 5A current rating
![SI4835DY](/img/package/soic8.jpg)
SI4835DY
SI4835DY - High Current P-Channel MOSFET in Small Signal Si Technology
![SI7111EDN-T1-GE3](/img/package/power33.jpg)
SI7111EDN-T1-GE3
VISHAY - SI7111EDN-T1-GE3 - MOSFET, P-CH, -30V, -60A, POWERPAK1212
![SISA72DN-T1-GE3](/img/package/power33.jpg)
SISA72DN-T1-GE3
N-Channel 40V MOSFET
![UMD5NTR](/img/package/sot363.jpg)
UMD5NTR
NPN+PNP SOT-363 Dual Digital Transistor
![IRFS3004TRL7PP](/img/package/d2pak7.jpg)
IRFS3004TRL7PP
D2PAK Packaged N-Channel MOSFET with 6 Pins and Tab
![D1017UK](/img/product.png)
D1017UK
Advanced RF Power Amplifier Component for Mission-Critical Systems
![BSC098N10NS5ATMA1](/img/package/son8.jpg)
BSC098N10NS5ATMA1
100V power MOSFET with OptiMOS 5 technology