BSV64
MAGNATEC - BSV64 - Bipolar (BJT) Single Transistor, NPN, 60 V, 100 MHz, 870 mW, 5 A, 40 hFE
Inventory:6,332
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : BSV64
-
Package/Case : CAN3
-
Brand : CENTRAL
-
Components Classification : Single Bipolar Transistors
-
Datesheet : BSV64 DataSheet (PDF)
Overview of BSV64
TRANSISTOR, NPN, TO-39; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 870mW; DC Collector Current: 5A; DC Current Gain hFE: 40hFE; Transistor Case Style: TO-39; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 1V; Continuous Collector Current Ic Max: 5A; Current Ic @ Vce Sat: 5A; Current Ic Continuous a Max: 5A; Current Ic Fall Time Measurement: 5A; Current Ic hFE: 2A; Device Marking: BSV64; Fall Time @ Ic: 1200ns; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 100MHz; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 40; No. of Transistors: 1; Power Dissipation Ptot Max: 870mW; Termination Type: Through Hole; Voltage Vcbo: 100V
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | No | Part Life Cycle Code | Obsolete |
Ihs Manufacturer | ZETEX PLC | Package Description | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code | ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | Collector Current-Max (IC) | 2 A |
Collector-Emitter Voltage-Max | 60 V | Configuration | SINGLE |
DC Current Gain-Min (hFE) | 40 | JEDEC-95 Code | TO-39 |
JESD-30 Code | O-MBCY-W3 | JESD-609 Code | e0 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Temperature-Max | 175 °C | Package Body Material | METAL |
Package Shape | ROUND | Package Style | CYLINDRICAL |
Peak Reflow Temperature (Cel) | 235 | Polarity/Channel Type | NPN |
Power Dissipation Ambient-Max | 5 W | Power Dissipation-Max (Abs) | 5 W |
Qualification Status | Not Qualified | Reference Standard | CECC |
Surface Mount | NO | Terminal Finish | TIN LEAD |
Terminal Form | WIRE | Terminal Position | BOTTOM |
Time@Peak Reflow Temperature-Max (s) | 10 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Transition Frequency-Nom (fT) | 100 MHz |
VCEsat-Max | 1 V |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![IRF3808SPBF](/img/package/to252.jpg)
IRF3808SPBF
Infineon IRF3808SPBF is a N-channel MOSFET featuring a 106 A current rating and 75 V HEXFET capability, packaged in a 3-Pin D2PAK configuration
![BCP56-10T1G](/img/package/sot223.jpg)
BCP56-10T1G
NPN Bipolar Junction Transistor with 80 Volts Voltage Rating and 1 Ampere Current Rating
![SUD23N06-31-GE3](/img/package/dpak2.jpg)
SUD23N06-31-GE3
N-channel MOSFET designed for high power applications with 50W power dissipation capability
![IRFP250MPBF](/img/package/to247.jpg)
IRFP250MPBF
Silicon N-channel MOSFET with 200V voltage and 30A current in TO-247AC casing
![2SA2022](/img/package/ll34.jpg)
2SA2022
PNP Bipolar Transistor, Sanyo 2SA2022, 7A, 50V, TO-220ML Package
![IXGH39N60BD1](/img/package/to247ad.jpg)
IXGH39N60BD1
With its 3-pin configuration and tab connection, this IGBT chip is easily mountable and efficient in operation
![MJE2955TG](/img/package/to220.jpg)
MJE2955TG
ROHS PNP TO-220-3 Bipolar Transistors - BJT, '60V 75W 20@4A,4V 10A
![SI2336DS-T1-GE3](/img/package/sot23.jpg)
SI2336DS-T1-GE3
30V Vds MOSFET with 8V Vgs in SOT-23 package
![IRFB17N50LPBF](/img/package/to220.jpg)
IRFB17N50LPBF
MOSFET IRFB17N50LPBF has a power dissipation of 220W and a gate threshold voltage of 5V at a current of 250uA
![SQ3427EEV-T1-GE3](/img/package/tsop6.jpg)
SQ3427EEV-T1-GE3
P-Channel 60V 5.5A Automotive Transistor