• packageimg
packageimg

BSR14

Trans GP BJT NPN 40V 0.8A 350mW 3-Pin SOT-23 T/R

Inventory:8,507

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for BSR14 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of BSR14

This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See BCW65C for characteristics.

Key Features

  • High current (max. 800 mA)
  • Low voltage (max. 40 V).
  • AEC-Q101 qualified

Application

  • This product is general usage and suitable for many different applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid BSR14 Pbfree Code Yes
Part Life Cycle Code Active Ihs Manufacturer ON SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PDSO-G3 Manufacturer Package Code 318BM
Reach Compliance Code compliant ECCN Code EAR99
Factory Lead Time 49 Weeks, 5 Days Samacsys Manufacturer onsemi
Collector Current-Max (IC) 0.8 A Collector-Emitter Voltage-Max 40 V
Configuration SINGLE DC Current Gain-Min (hFE) 40
JESD-30 Code R-PDSO-G3 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.35 W Qualification Status Not Qualified
Surface Mount YES Terminal Finish TIN
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON Transition Frequency-Nom (fT) 300 MHz
Turn-off Time-Max (toff) 285 ns Turn-on Time-Max (ton) 35 ns

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

DMN6040SSD-13

DMN6040SSD-13

DMN6040SSD-13 60V Dual N-Ch Enhancement MOSFET SOIC8 by Diodes Inc
IXXH50N60C3D1

IXXH50N60C3D1

600V/100Amp XPT IGBT C3-Class IGBT Transistors CoPacked
2SD2439

2SD2439

NPN Trans Darlington with 150V voltage rating and 10A current rating
SIR770DP-T1-GE3

SIR770DP-T1-GE3

High-power semiconductor device utilized for switching applications, featuring N-channel MOSFET technology
BBS3002-TL-1E

BBS3002-TL-1E

With a voltage rating of 60V and a maximum current of 100A
MMBT4401-TP

MMBT4401-TP

Small Signal Bipolar Transistors
SPD03N60S5

SPD03N60S5

N-Channel MOSFET Transistor, TO-252AA package
Q6040P

Q6040P

Alternistor for high-voltage applications ensures reliable power control and protection
IRF7204PBF

IRF7204PBF

IRF7204PBF MOSFET: P Channel Device capable of Handling 20V and 5
SI7465DP-T1-E3

SI7465DP-T1-E3

SI7465DP-T1-E3 is a power MOSFET device with P-channel enhancement, specified for a voltage range of 60V and a maximum current of 3