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BSP75NHUMA1

Smart SIPMOS technology N-channel vertical power FET

Quantity Unit Price(USD) Ext. Price
1 $1.363 $1.36
10 $1.159 $11.59
30 $1.048 $31.44
100 $0.922 $92.20
500 $0.864 $432.00
1000 $0.840 $840.00

Inventory:9,590

*The price is for reference only.
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Overview of BSP75NHUMA1

The BSP75NHUMA1 is a N-channel enhancement mode field-effect transistor (FET) designed for use in a wide range of applications, including power management and switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • 1: Gate (G)
  • 2: Drain (D)
  • 3: Source (S)

Circuit Diagram

Incorporate a circuit diagram that illustrates the connections and operation of the BSP75NHUMA1 for a more visual representation.

Key Features

  • Enhancement Mode: The BSP75NHUMA1 is an enhancement mode FET, offering high performance in power management applications.
  • Low On-Resistance: With a low on-resistance, this FET allows for efficient power handling and low power dissipation.
  • High Current Capability: The FET is capable of handling high currents, making it suitable for power switching circuits.
  • Low Threshold Voltage: The low threshold voltage enables easy control of the FET in various circuit configurations.
  • RoHS Compliant: The BSP75NHUMA1 is RoHS compliant, ensuring environmental friendliness.

Note: For detailed technical specifications, please refer to the BSP75NHUMA1 datasheet.

Application

  • Power Management: The BSP75NHUMA1 is commonly used in power management circuits for applications such as voltage regulation and DC-DC conversion.
  • Switching Circuits: It is suitable for use in high-speed switching circuits for efficient power control.
  • Motor Control: This FET can be utilized in motor control applications due to its high current capability and low on-resistance.

Functionality

The BSP75NHUMA1 serves as a high-performance N-channel enhancement mode FET, providing efficient power handling and control in various electronic circuits.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the gate pin for controlling the FET's conductivity.
  • Drain-Source Connection: Connect the load or power source between the drain and source pins.
  • Ground Connection: Connect the source pin to the ground reference of the circuit.

Frequently Asked Questions

Q: What is the maximum drain-source voltage rating of the BSP75NHUMA1?
A: The maximum drain-source voltage for this FET is specified in the datasheet.

Q: Can the BSP75NHUMA1 be used in high-frequency applications?
A: Yes, it can be used in high-frequency applications, but refer to the datasheet for specific performance characteristics in such scenarios.

Equivalent

For similar functionalities, consider these alternatives to the BSP75NHUMA1:

  • BSP52: A similar N-channel enhancement mode FET with comparable performance characteristics.
  • BSP149: This FET offers similar characteristics and can be used as an alternative in certain applications.
  • BSP78: Another viable alternative with performance comparable to the BSP75NHUMA1.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

functionalPacking TAPE & REEL msl 3
halogenFree no customerInfo STANDARD
fgr A32 productClassification ASP
productStatusInfo discontinued hfgr B
packageName PG-SOT223-4 pbFree yes
moistureProtPack DRY orderingCode SP000305171
nearestEquivalent BTT3050EJ fourBlockPackageName PG-SOT223-4-34
rohsCompliant yes opn BSP75NHUMA1
docuNoCancellation PD_201_23 completelyPbFree yes
sapMatnrSali SP000305171

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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