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BSH103BKR

Product BSH103BKR description - BSH103BK - 30 V N-channel Trench MOSFET TO-236 3-Pin

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Overview of BSH103BKR

Featuring a N-channel design and a 30V drain-source voltage, the BSH103BKR MOSFET is a high-performance transistor suitable for a wide range of electronic applications. With a 1A continuous drain current rating and a surface mount configuration, this component offers easy integration and reliable operation. Its low Rds(on) test voltage of 4.5V and maximum gate source threshold voltage of 1V make it a dependable choice for projects requiring efficient power management. Additionally, its RoHS compliance ensures that it meets stringent environmental standards

Key Features

  • Superior accuracy
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Application

  • Wide voltage range
  • Flexible configuration
  • Reliable operation

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Nexperia Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case SOT-23-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 1 A
Rds On - Drain-Source Resistance 270 mOhms Vgs - Gate-Source Voltage - 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage 1.25 V Qg - Gate Charge 800 pC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 2.1 W Channel Mode Enhancement
Brand Nexperia Configuration Single
Fall Time 3 ns Forward Transconductance - Min 2.9 S
Product Type MOSFET Rise Time 3 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type Trench MOSFET Typical Turn-Off Delay Time 6 ns
Typical Turn-On Delay Time 2 ns Part # Aliases 934662517215
Unit Weight 0.000282 oz

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