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BSC096N10LS5ATMA1

High-voltage, high-current MOSFET with low on-resistance

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Overview of BSC096N10LS5ATMA1

With a threshold voltage of 2.0V and a gate charge of 75nC, the BSC096N10LS5ATMA1 power MOSFET provides fast switching characteristics and precise power flow control in electronic circuits. This level of control and efficiency is essential for achieving optimal performance in modern electronic systems where power management is a critical factor

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series BSC096N10 Product Status Active
FET Type N-Channel Technology Si
Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.3V @ 36µA Gate Charge (Qg) (Max) @ Vgs 14.6 nC @ 4.5 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 50 V
Power Dissipation (Max) 3W (Ta), 83W (Tc) Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Supplier Device Package PG-TDSON-8-6
Package / Case TDSON-8 Base Product Number BSC096
Manufacturer Infineon Product Category MOSFET
RoHS Details Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 72 A
Rds On - Drain-Source Resistance 9.6 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.3 V Qg - Gate Charge 14.6 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 83 W Channel Mode Enhancement
Brand Infineon Technologies Configuration Single
Fall Time 5 ns Forward Transconductance - Min 22 ns
Product Type MOSFET Rise Time 3.5 ns
Factory Pack Quantity 5000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 15 ns
Typical Turn-On Delay Time 4.7 ns Part # Aliases BSC096N10LS5 SP001861036
Unit Weight 0.003683 oz

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