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BSC046N10NS3GATMA1

Trans MOSFET N-CH 100V 17A 8-Pin TDSON EP T/R

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Overview of BSC046N10NS3GATMA1

The BSC046N10NS3GATMA1 is a power MOSFET transistor designed for high-performance switching applications.It features a low on-state resistance and high current capability,making it suitable for power management in various electronic circuits.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source
  • B:Body Diode
  • VDD:Drain Supply Voltage
  • VGS:Gate-Source Voltage
  • ID:Drain Current
  • IG:Gate Current
  • RthJA:Thermal Resistance
  • TJ:Junction Temperature
  • TSTG:Storage Temperature
  • NC:No Connection
  • NC:No Connection


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BSC046N10NS3GATMA1 power MOSFET for a visual representation.

Key Features

  • High Current Capability:The BSC046N10NS3GATMA1 is capable of handling high drain currents,ideal for power switching applications.
  • Low On-State Resistance:With its low RDS(on),this MOSFET minimizes power loss and improves efficiency in switching circuits.
  • Fast Switching Speed:This transistor offers fast switching characteristics,ensuring rapid response in power management applications.
  • High Avalanche Energy Capability:Designed to withstand high avalanche energy,the BSC046N10NS3GATMA1 provides robust performance under transient conditions.
  • Low Gate Charge:Features low gate charge for efficient gate control and reduced switching losses.

Note:For detailed technical specifications,please refer to the BSC046N10NS3GATMA1 datasheet.

Application

  • Power Supplies:Suitable for power supply circuits requiring high current switching capabilities.
  • Motor Control:Ideal for motor control applications where high power switching is necessary.
  • Voltage Regulation:Used in voltage regulation circuits to control power flow based on system requirements.

Functionality

The BSC046N10NS3GATMA1 power MOSFET transistor is designed to efficiently handle high currents and offer low on-state resistance for effective power management in electronic systems.

Usage Guide

  • Gate Control:Apply the appropriate gate-source voltage to control the switching behavior of the MOSFET.
  • Current Handling:Ensure that the drain current does not exceed the maximum rated value(ID) to prevent damage to the device.
  • Heat Dissipation:Consider the thermal characteristics and use appropriate heat sinking methods to maintain optimal operating temperatures.

Frequently Asked Questions

Q:Can the BSC046N10NS3GATMA1 be used in high-frequency switching applications?
A:Yes,the BSC046N10NS3GATMA1 offers fast switching speeds and is suitable for high-frequency switching applications.

Equivalent

For similar functionalities,consider these alternatives to the BSC046N10NS3GATMA1:

  • IRF3205:This power MOSFET transistor offers comparable performance characteristics to the BSC046N10NS3GATMA1 and is commonly used in power management applications.
  • FDP8870:An alternative MOSFET transistor with similar specifications suitable for high-power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series OptiMOS™ Product Status Obsolete
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 17A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 4.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 120µA Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 50 V
Power Dissipation (Max) 156W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package PG-TDSON-8-7
Package / Case 8-PowerTDFN

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