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BSC016N06NSATMA1

1.6 mOhm N-Channel Power Mosfet with 71 nC gate charge in TDSON-8 FL package

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Overview of BSC016N06NSATMA1

The BSC016N06NSATMA1 is a Power MOSFET transistor designed for high-performance switching applications.This N-channel MOSFET features a low on-resistance and high current capability,making it suitable for power management in various electronic circuits.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • Gate:Input control terminal for turning the MOSFET on and off.
  • Source:Terminal connected to the source of the MOSFET.
  • Drain:Terminal connected to the drain of the MOSFET.
  • Body:Substrate terminal typically connected to the source for improved thermal performance.

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BSC016N06NSATMA1 MOSFET for a visual representation.

Key Features

  • Low On-Resistance: The BSC016N06NSATMA1 offers a low on-resistance for efficient power management and reduced power loss.
  • High Current Capability: With its high current rating, this MOSFET can handle significant loads in various applications.
  • Fast Switching Speed: The fast switching speed of this MOSFET allows for quick response times in switching operations.
  • Enhanced Thermal Performance: The body diode and substrate of the MOSFET contribute to improved thermal characteristics.
  • Robust Construction: The BSC016N06NSATMA1 is built with durable materials for reliable performance under demanding conditions.

Note: For detailed technical specifications, please refer to the BSC016N06NSATMA1 datasheet.

Application

  • Power Management: Ideal for power switching applications in DC-DC converters, motor control, and power supplies.
  • Electronic Circuits: Used in various electronic circuits for voltage regulation, power amplification, and current control.
  • Switching Systems: Suitable for use in high-speed switching systems and pulse circuits.

Functionality

The BSC016N06NSATMA1 Power MOSFET is designed to control and switch high-power loads efficiently.It provides a reliable and high-performance solution for power management in electronic systems.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the gate terminal to control the switching behavior of the MOSFET.
  • Source/Drain Connections: Connect the source terminal to the ground or common reference point and the drain terminal to the load circuit.
  • Thermal Considerations: Ensure adequate heat sinking and thermal management for optimal performance and reliability.

Frequently Asked Questions

Q: What is the maximum current rating of the BSC016N06NSATMA1?
A: The BSC016N06NSATMA1 can handle a maximum continuous current of X amperes.

Q: Is the BSC016N06NSATMA1 suitable for automotive applications?
A: Yes, the BSC016N06NSATMA1 is designed for automotive environments and can be used in automotive power management systems.

Equivalent

For similar functionalities, consider these alternatives to the BSC016N06NSATMA1:

  • IRF540N: A comparable N-channel MOSFET with similar characteristics for power switching applications.
  • FQP30N06L: This MOSFET offers high current capability and low on-resistance for efficient power management.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

functionalPacking TAPE & REEL addProductInfo MS, RoHS compliant, non dry
packageNameMarketing SuperSO8 FL msl 1
halogenFree yes customerInfo STANDARD
fgr S36 productClassification COM
productStatusInfo active hfgr A
packageName PG-TDSON-8 pbFree yes
moistureProtPack NON DRY orderingCode SP000924882
fourBlockPackageName PG-TDSON-8-17 rohsCompliant yes
opn BSC016N06NSATMA1 completelyPbFree no
sapMatnrSali SP000924882

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