BD536
High-performance power transistor for general-purpose applicatio
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.587 | $0.59 |
10 | $0.487 | $4.87 |
50 | $0.435 | $21.75 |
100 | $0.385 | $38.50 |
500 | $0.356 | $178.00 |
1000 | $0.324 | $324.00 |
Inventory:6,645
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Part Number : BD536
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Package/Case : TO-220
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Brand : ST
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Components Classification : Single Bipolar Transistors
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Datesheet : BD536 DataSheet (PDF)
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Series : BD536
Overview of BD536
Bipolar (BJT) Transistor PNP 60 V 8 A 50 W Through Hole TO-220
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | BD536 | Pbfree Code | Yes |
Rohs Code | Yes | Part Life Cycle Code | Obsolete |
Ihs Manufacturer | STMICROELECTRONICS | Part Package Code | TO-220AB |
Package Description | ROHS COMPLIANT, TO-220, 3 PIN | Pin Count | 3 |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
HTS Code | 8541.29.00.95 | Samacsys Manufacturer | STMicroelectronics |
Collector Current-Max (IC) | 8 A | Collector-Emitter Voltage-Max | 60 V |
Configuration | SINGLE | DC Current Gain-Min (hFE) | 15 |
JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
JESD-609 Code | e3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Temperature-Max | 150 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Polarity/Channel Type | PNP |
Power Dissipation Ambient-Max | 50 W | Power Dissipation-Max (Abs) | 50 W |
Qualification Status | Not Qualified | Surface Mount | NO |
Terminal Finish | MATTE TIN | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Transition Frequency-Nom (fT) | 12 MHz |
VCEsat-Max | 0.8 V | Manufacturer | STMicroelectronics |
Product Category | Bipolar Transistors - BJT | RoHS | Details |
Mounting Style | Through Hole | Package / Case | TO-220-3 |
Transistor Polarity | PNP | Collector- Emitter Voltage VCEO Max | 60 V |
Collector- Base Voltage VCBO | 60 V | Emitter- Base Voltage VEBO | 5 V |
Collector-Emitter Saturation Voltage | 800 mV | Maximum DC Collector Current | 8 A |
Pd - Power Dissipation | 50 W | Gain Bandwidth Product fT | 12 MHz |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 150 C |
Series | BD536 | Brand | STMicroelectronics |
Continuous Collector Current | 8 A | DC Collector/Base Gain hfe Min | 20 |
DC Current Gain hFE Max | 40 | Height | 9.15 mm |
Length | 10.4 mm | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 50 | Subcategory | Transistors |
Technology | Si | Width | 4.6 mm |
Unit Weight | 0.211644 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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