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BD241B

Silicon-based NPN transistor for reliable performanc

Inventory:7,599

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Overview of BD241B

The BD241B is a NPN power transistor designed for use in general-purpose amplifier and switching applications. It features high current and voltage ratings, making it suitable for medium-power linear and switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter (E): Connected to the ground or common terminal
  • Base (B): Input terminal for controlling the transistor's conductivity
  • Collector (C): Output terminal for the amplified or switched signal

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BD241B transistor for a visual representation.

Key Features

  • High Current and Voltage Rating: The BD241B offers high current and voltage handling capabilities, suitable for various medium-power applications.
  • NPN Transistor: As an NPN type, it allows for amplification and switching of positive voltage signals.
  • Low Saturation Voltage: The transistor exhibits low saturation voltage, minimizing power dissipation in switching applications.
  • Complementary PNP Pair: The BD241B can be used in conjunction with complementary PNP transistors for push-pull amplification or switching.

Note: For detailed technical specifications, please refer to the BD241B datasheet.

Application

  • Audio Amplification: Suitable for audio amplifier circuits and power audio amplification.
  • Power Supplies: Used in linear voltage regulator circuits and power supply control.
  • Switching Circuits: Ideal for medium-power switching applications such as relay and motor controls.

Functionality

The BD241B NPN power transistor is designed to amplify or switch medium-power signals, providing versatile performance in various electronic circuits.

Usage Guide

  • Base Connection: Apply a biasing voltage to the base (B) terminal to control the transistor's conductivity.
  • Emitter and Collector: Connect the load to the collector (C) and ground to the emitter (E) for amplification or switching.
  • Heat Dissipation: Ensure proper heat sinking to dissipate the heat generated during high-power operation.

Frequently Asked Questions

Q: Can the BD241B be used in audio amplifier circuits?
A: Yes, the BD241B is suitable for audio amplification and power audio amplification applications.

Equivalent

For similar functionalities, consider these alternatives to the BD241B:

  • 2N3055: A popular NPN power transistor with high current and voltage ratings for medium-power applications.
  • TIP122: This is a complementary PNP transistor often used in conjunction with NPN transistors like the BD241B for push-pull applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid BD241B Rohs Code Yes
Part Life Cycle Code Obsolete Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-220AB Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3 Reach Compliance Code not_compliant
ECCN Code EAR99 HTS Code 8541.29.00.95
Samacsys Manufacturer STMicroelectronics Collector Current-Max (IC) 3 A
Collector-Emitter Voltage-Max 80 V Configuration SINGLE
DC Current Gain-Min (hFE) 10 JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Polarity/Channel Type NPN Power Dissipation Ambient-Max 40 W
Power Dissipation-Max (Abs) 40 W Qualification Status Not Qualified
Surface Mount NO Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON
Transition Frequency-Nom (fT) 3 MHz VCEsat-Max 1.2 V

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