BD241B
Silicon-based NPN transistor for reliable performanc
Inventory:7,599
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Part Number : BD241B
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Package/Case : TO-220-3
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Brand : BOURNS
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Components Classification : Single Bipolar Transistors
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Datesheet : BD241B DataSheet (PDF)
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Series : BD241
The BD241B is a NPN power transistor designed for use in general-purpose amplifier and switching applications. It features high current and voltage ratings, making it suitable for medium-power linear and switching circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the BD241B transistor for a visual representation. Note: For detailed technical specifications, please refer to the BD241B datasheet. Functionality The BD241B NPN power transistor is designed to amplify or switch medium-power signals, providing versatile performance in various electronic circuits. Usage Guide Q: Can the BD241B be used in audio amplifier circuits? For similar functionalities, consider these alternatives to the BD241B:Overview of BD241B
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the BD241B is suitable for audio amplification and power audio amplification applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | BD241B | Rohs Code | Yes |
Part Life Cycle Code | Obsolete | Ihs Manufacturer | STMICROELECTRONICS |
Part Package Code | TO-220AB | Package Description | FLANGE MOUNT, R-PSFM-T3 |
Pin Count | 3 | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | HTS Code | 8541.29.00.95 |
Samacsys Manufacturer | STMicroelectronics | Collector Current-Max (IC) | 3 A |
Collector-Emitter Voltage-Max | 80 V | Configuration | SINGLE |
DC Current Gain-Min (hFE) | 10 | JEDEC-95 Code | TO-220AB |
JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Polarity/Channel Type | NPN | Power Dissipation Ambient-Max | 40 W |
Power Dissipation-Max (Abs) | 40 W | Qualification Status | Not Qualified |
Surface Mount | NO | Terminal Finish | MATTE TIN |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Transition Frequency-Nom (fT) | 3 MHz | VCEsat-Max | 1.2 V |
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