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BCP56T3G

Trans GP BJT NPN 80V 1A 1500mW 4-Pin(3+Tab) SOT-223 T/R

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Overview of BCP56T3G

The BCP56T3G is a versatile PNP Bipolar Transistor that offers high performance in a compact SOT-223 package. With a maximum collector current rating of 1A, this transistor is ideal for a wide range of general purpose switching and amplification applications. Its collector-emitter voltage of -80V and base-emitter voltage of -5V make it suitable for use in electronic circuits requiring medium power and high current gain

Key Features

  • This transistor is suitable for high frequency and high current applications.
  • The BCP56T3G has a high gain, low voltage drop and high switching speed.
  • This product is ideal for amplifier and switch mode power supplies.
  • Its characteristics make it an excellent choice for general purpose amplifier circuits.
  • This transistor is designed to operate at very high frequencies with minimal distortion.
  • It has a high current gain, low saturation voltage and high switching speed making it suitable for various applications

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer onsemi Product Category Bipolar Transistors - BJT
RoHS Details Mounting Style SMD/SMT
Package / Case SOT-223-4 Transistor Polarity NPN
Configuration Single Collector- Emitter Voltage VCEO Max 80 V
Collector- Base Voltage VCBO 100 V Emitter- Base Voltage VEBO 5 V
Collector-Emitter Saturation Voltage 500 mV Maximum DC Collector Current 1 A
Pd - Power Dissipation 1.5 W Gain Bandwidth Product fT 130 MHz
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 150 C
Series BCP56 Brand onsemi
Continuous Collector Current 1 A DC Collector/Base Gain hfe Min 25
Height 1.57 mm Length 6.5 mm
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 4000
Subcategory Transistors Technology Si
Width 3.5 mm Unit Weight 0.003951 oz

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