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BCP55-10

Trans GP BJT NPN 60V 1A 2000mW 4-Pin(3+Tab) SOT-223 T/R

Quantity Unit Price(USD) Ext. Price
5 $0.064 $0.32
50 $0.056 $2.80
150 $0.052 $7.80
500 $0.050 $25.00
2500 $0.046 $115.00
5000 $0.044 $220.00

Inventory:7,030

*The price is for reference only.
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Overview of BCP55-10

Bipolar (BJT) Transistor NPN 60 V 1 A 100MHz 1.3 W Surface Mount SOT-223

Key Features

  • For AF driver and output stages
  • High collector current
  • Low collector-emitter saturation voltage
  • Complementary to BCP51,BCP52,BCP53

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer DIOTEC SEMICONDUCTOR AG Package Description ,
Reach Compliance Code compliant ECCN Code EAR99
Case Connection COLLECTOR Collector Current-Max (IC) 1 A
Collector-Emitter Voltage-Max 60 V Configuration SINGLE
DC Current Gain-Min (hFE) 63 JESD-30 Code R-PDSO-G4
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 4 Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 2 W Surface Mount YES
Terminal Form GULL WING Terminal Position DUAL
Transistor Application SWITCHING Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100 MHz VCEsat-Max 0.5 V

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Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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