BC846BS,115
Trans GP BJT NPN 65V 0.1A 300mW 6-Pin TSSOP T/R
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
10 | $0.042 | $0.42 |
100 | $0.034 | $3.40 |
300 | $0.030 | $9.00 |
3000 | $0.026 | $78.00 |
6000 | $0.024 | $144.00 |
9000 | $0.023 | $207.00 |
Inventory:7,947
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Part Number : BC846BS,115
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Package/Case : 6-TSSOP
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Brand : Nexperia
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Components Classification : Bipolar Transistor Arrays
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Datesheet : BC846BS,115 DataSheet (PDF)
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Series : BC846BS
Overview of BC846BS,115
Sporting a DC current gain (hFE) ranging from 110 to 800 at a collector current of 1 mA, this transistor provides the amplification capabilities necessary for a variety of electronic devices. Housed in an SOT-416 surface-mount package, the BC846BS,115 is perfect for use in high-density circuit applications where space is at a premium. Its total power dissipation of 250 mW and thermal resistance from junction to ambient of 625 °C/W ensure reliable performance even under demanding conditions
Key Features
- PNP or NPN general purpose
- Wide operating temperature range
- Low noise figure
- Fast switching times
- Reel packaging for automated assembly
Application
- Highly versatile transistor
- Perfect for amplifying signals
- Great for electronic projects
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | Nexperia | Product Category | Bipolar Transistors - BJT |
RoHS | Details | Mounting Style | SMD/SMT |
Package / Case | TSSOP-6 | Transistor Polarity | NPN |
Configuration | Dual | Collector- Emitter Voltage VCEO Max | 65 V |
Collector- Base Voltage VCBO | 80 V | Emitter- Base Voltage VEBO | 6 V |
Collector-Emitter Saturation Voltage | 200 mV | Maximum DC Collector Current | 100 mA |
Pd - Power Dissipation | 200 mW | Gain Bandwidth Product fT | 100 MHz |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Brand | Nexperia | Continuous Collector Current | - 100 mA |
DC Collector/Base Gain hfe Min | 290 | DC Current Gain hFE Max | 200 at 2 mA, 5 V |
Height | 1 mm | Length | 2.2 mm |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 3000 |
Subcategory | Transistors | Technology | Si |
Width | 1.35 mm | Part # Aliases | 934063582115 |
Unit Weight | 0.035274 oz | Product Status | Active |
Transistor Type | 2 NPN (Dual) | Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 65V | Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 100mA |
Current - Collector Cutoff (Max) | 15nA (ICBO) | DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
Power - Max | 300mW | Frequency - Transition | 100MHz |
Operating Temperature | 150°C (TJ) | Mounting Type | Surface Mount |
Supplier Device Package | 6-TSSOP | Base Product Number | BC846 |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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