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BC846BS,115

Trans GP BJT NPN 65V 0.1A 300mW 6-Pin TSSOP T/R

Quantity Unit Price(USD) Ext. Price
10 $0.042 $0.42
100 $0.034 $3.40
300 $0.030 $9.00
3000 $0.026 $78.00
6000 $0.024 $144.00
9000 $0.023 $207.00

Inventory:7,947

*The price is for reference only.
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Overview of BC846BS,115

Sporting a DC current gain (hFE) ranging from 110 to 800 at a collector current of 1 mA, this transistor provides the amplification capabilities necessary for a variety of electronic devices. Housed in an SOT-416 surface-mount package, the BC846BS,115 is perfect for use in high-density circuit applications where space is at a premium. Its total power dissipation of 250 mW and thermal resistance from junction to ambient of 625 °C/W ensure reliable performance even under demanding conditions

Key Features

  • PNP or NPN general purpose
  • Wide operating temperature range
  • Low noise figure
  • Fast switching times
  • Reel packaging for automated assembly

Application

  • Highly versatile transistor
  • Perfect for amplifying signals
  • Great for electronic projects

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Nexperia Product Category Bipolar Transistors - BJT
RoHS Details Mounting Style SMD/SMT
Package / Case TSSOP-6 Transistor Polarity NPN
Configuration Dual Collector- Emitter Voltage VCEO Max 65 V
Collector- Base Voltage VCBO 80 V Emitter- Base Voltage VEBO 6 V
Collector-Emitter Saturation Voltage 200 mV Maximum DC Collector Current 100 mA
Pd - Power Dissipation 200 mW Gain Bandwidth Product fT 100 MHz
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Brand Nexperia Continuous Collector Current - 100 mA
DC Collector/Base Gain hfe Min 290 DC Current Gain hFE Max 200 at 2 mA, 5 V
Height 1 mm Length 2.2 mm
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 3000
Subcategory Transistors Technology Si
Width 1.35 mm Part # Aliases 934063582115
Unit Weight 0.035274 oz Product Status Active
Transistor Type 2 NPN (Dual) Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 65V Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V
Power - Max 300mW Frequency - Transition 100MHz
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package 6-TSSOP Base Product Number BC846

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