AQY410S

Solid State SPST-NC (1 Form B) 4-SOP (0.173", 4.40mm)

Key Features

• 1. 60V type couples high capacity (0.5A) with low on-resistance (1Ω).
• 2. SO package 4-pin type in super miniature design
• The device comes in a super-miniature SO package 4-pin type measuring (W) 4.3×(L) 4.4×(H) 2.1 mm (W) .169×(L .173×(H) .083 inch —approx. 70% of the volume and 70% of the footprint size of
• 2. Normally closed type (1 Form B) is low on-resistance. (All AQ❍4 PhotoMOS are Form B types. And also the Form A types have a low on-resistance.)
• This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method.
• 3. Tape and reel
• The device comes standard in a tape and reel (1,000 pcs./reel) to facilitate automatic insertion machines.
• 4. Controls low-level analog signals
• PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion.
• 5. Low-level off-state leakage current
• In contrast to the SSR with an off-state leakage current of several milliamperes, the PhotoMOS relay features a very small off state leakage current of 1nA even with the rated load voltage of 400 V (AQY414S).