• 2SK3065T100 SOT89-3
2SK3065T100 SOT89-3

2SK3065T100

60V N-channel MOSFET with a maximum current rating of 2A

Quantity Unit Price(USD) Ext. Price
5 $0.249 $1.24
50 $0.200 $10.00
150 $0.180 $27.00
1000 $0.155 $155.00
2000 $0.143 $286.00
5000 $0.136 $680.00

Inventory:7,588

*The price is for reference only.
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Overview of 2SK3065T100

The 2SK3065T100 is a N-channel MOSFET transistor designed for high power applications. It features a voltage rating of 100V and a current rating of 30A, making it suitable for power amplification and switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • B: Body

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2SK3065T100 MOSFET for a visual representation.

Key Features

  • High Power Rating: The 2SK3065T100 can handle high voltages and currents, suitable for power applications.
  • Low ON Resistance: The MOSFET has low ON resistance, minimizing power loss and improving efficiency.
  • Fast Switching Speed: Offers fast switching times, ideal for applications requiring rapid switching.
  • Safe Operating Area Protection: Includes protection features to prevent operation beyond safe limits.
  • Temperature Stability: Maintains stable performance over a wide temperature range.

Note: For detailed technical specifications, please refer to the 2SK3065T100 datasheet.

Application

  • Power Amplification: Ideal for use in power amplification circuits for audio or motor drive applications.
  • Switching Circuits: Suitable for switching high-power loads in industrial and automotive systems.
  • Voltage Regulation: Can be utilized in voltage regulation circuits for maintaining stable power outputs.

Functionality

The 2SK3065T100 is a high-power N-channel MOSFET transistor that offers efficient power handling and fast switching characteristics. It is a reliable component for power electronics applications.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the control signal for turning the MOSFET on or off.
  • Drain and Source: Connect the load or circuit to be driven between the drain (D) and source (S) pins.
  • Body Connection: The body (B) pin should be connected to the system ground for proper operation.

Frequently Asked Questions

Q: What is the maximum voltage rating of the 2SK3065T100?
A: The 2SK3065T100 has a maximum voltage rating of 100V.

Q: Is the 2SK3065T100 suitable for high-frequency applications?
A: While the 2SK3065T100 offers fast switching speeds, it is typically used in high power applications rather than high-frequency circuits.

Equivalent

For similar functionalities, consider these alternatives to the 2SK3065T100:

  • IRF3205: This N-channel MOSFET offers comparable power handling capabilities and voltage ratings.
  • BUK854-500C: A high-power N-channel MOSFET with similar performance characteristics to the 2SK3065T100.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case SOT-89-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 2 A
Rds On - Drain-Source Resistance 350 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 800 mV Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2 W
Channel Mode Enhancement Brand ROHM Semiconductor
Configuration Single Fall Time 70 ns
Height 1.5 mm Length 4.5 mm
Product Type MOSFET Rise Time 50 ns
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 N-Channel Type MOSFET
Typical Turn-Off Delay Time 120 ns Typical Turn-On Delay Time 20 ns
Width 2.5 mm Unit Weight 0.004603 oz

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