• 2SD2083 TO-3P
2SD2083 TO-3P

2SD2083

TO-3P Packaged NPN Darlington Transistor rated at 120V and 25A

Inventory:6,239

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Overview of 2SD2083

The 2SD2083 is a silicon NPN epitaxial planar type transistor designed for high-power amplifier applications. It features high current capability and low saturation voltage, making it suitable for audio and general-purpose amplifier circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • C: Collector
  • B: Base

Circuit Diagram

Include a circuit diagram showing the typical usage of the 2SD2083 transistor in amplifier circuits for reference.

Key Features

  • High Current Capability: The 2SD2083 is capable of handling high currents, making it suitable for power amplifier applications.
  • Low Saturation Voltage: This transistor exhibits low saturation voltage, ensuring efficient operation in amplifier circuits.
  • High Frequency Performance: Offers good high-frequency characteristics, suitable for audio amplifier applications.
  • Low Noise: Provides low noise performance, making it ideal for audio amplification with minimal interference.
  • Robust Construction: The silicon NPN epitaxial planar design ensures reliability and stability in amplifier circuits.

Note: Refer to the 2SD2083 datasheet for detailed technical specifications.

Application

  • Audio Amplifiers: Ideal for use in high-power audio amplifier circuits for quality sound reproduction.
  • General-Purpose Amplification: Suitable for various general-purpose amplification tasks where high current and low saturation voltage are required.
  • RF Amplification: Can be utilized in radio frequency (RF) amplifier circuits due to its high-frequency performance.

Functionality

The 2SD2083 transistor is designed to amplify electrical signals in high-power applications with low saturation voltage and high current capability, ensuring efficient and reliable amplification.

Usage Guide

  • Collector-Base Biasing: Connect the collector (C) and base (B) terminals based on the specific biasing requirements of the circuit.
  • Emitter Connection: Connect the emitter (E) terminal to complete the transistor configuration.
  • Amplifier Circuit Design: Design amplifier circuits with proper biasing and load configurations for optimal performance.

Frequently Asked Questions

Q: Is the 2SD2083 suitable for high-fidelity audio applications?
A: Yes, the 2SD2083's low noise and high current capability make it suitable for high-quality audio amplification.

Equivalent

For similar functionalities, consider these alternatives to the 2SD2083:

  • 2SC5200: A complementary NPN transistor with high current and power capabilities for audio amplifier applications.
  • MJL4281A: This transistor offers high power dissipation and low saturation voltage for power amplifier designs.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

ECCN (US) EAR99 Part Status Obsolete
Automotive No PPAP No
Type NPN Configuration Single
Number of Elements per Chip 1 Maximum Collector-Emitter Voltage (V) 120
Maximum Collector Base Voltage (V) 120 Maximum Emitter Base Voltage (V) 6
Maximum Base Emitter Saturation Voltage (V) 2.5@24mA@12A Maximum Continuous DC Collector Current (A) 25
Maximum Collector Cut-Off Current (uA) 10 Typical Current Gain Bandwidth (MHz) 20
Maximum Collector-Emitter Saturation Voltage (V) 1.8@24mA@12A Minimum DC Current Gain 2000@12A@4V
Maximum Power Dissipation (mW) 120000 Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150 Mounting Through Hole
Package Height 17.9 Package Width 4.8
Package Length 15.6 PCB changed 3
Tab Tab Standard Package Name TO
Supplier Package TO-3P Pin Count 3
Lead Shape Through Hole

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