• 2SD1898T100Q MPT3
2SD1898T100Q MPT3

2SD1898T100Q

ROHS compliant silicon

Quantity Unit Price(USD) Ext. Price
1 $0.155 $0.16
10 $0.125 $1.25
30 $0.114 $3.42
100 $0.098 $9.80
500 $0.091 $45.50
1000 $0.074 $74.00

Inventory:4,343

*The price is for reference only.
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Overview of 2SD1898T100Q

The 2SD1898T100Q is a high-voltage NPN power transistor designed for use in power supply and switching applications. This transistor features a maximum collector-emitter voltage of 100V and a continuous collector current of 2A, making it suitable for various power control circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2SD1898T100Q transistor for a visual representation.

Key Features

  • High-Voltage NPN Transistor: The 2SD1898T100Q is a high-voltage NPN transistor capable of handling large voltage and current levels.
  • Low Saturation Voltage: This transistor offers low saturation voltage, minimizing power loss and improving efficiency in power applications.
  • High Collector Current: With a continuous collector current of 2A, this transistor can handle moderate to high power loads.
  • Integrated Protection Diodes: The 2SD1898T100Q includes built-in protection diodes for inductive load switching applications.
  • Compact Package: Available in a compact TO-220 package suitable for easy mounting on heat sinks.

Note: For detailed technical specifications, please refer to the 2SD1898T100Q datasheet.

Application

  • Power Supply Systems: Ideal for use in power supply units, voltage regulators, and DC-DC converters.
  • Switching Circuits: Suitable for switching applications such as relay drivers and motor control circuits.
  • Amplifier Output Stages: Can be used in audio amplifier output stages and high-power signal amplification.

Functionality

The 2SD1898T100Q NPN transistor is designed to control high-power applications with efficient switching capabilities. It provides reliable power handling for various electronic circuits.

Usage Guide

  • Transistor Orientation: Ensure correct pinout orientation with Emitter (E), Base (B), and Collector (C) connections.
  • Heat Dissipation: Proper heat sinking is essential to maintain the transistor within safe operating temperatures.
  • Current Limiting: Implement appropriate current limiting techniques to protect the transistor from overcurrent conditions.

Frequently Asked Questions

Q: What is the maximum collector-emitter voltage rating of the 2SD1898T100Q transistor?
A: The 2SD1898T100Q has a maximum collector-emitter voltage rating of 100V.

Q: Can the 2SD1898T100Q be used in high-power applications?
A: Yes, the 2SD1898T100Q is suitable for high-power applications with its 2A continuous collector current rating.

Equivalent

For similar functionalities, consider these alternatives to the 2SD1898T100Q:

  • 2N3055: A widely used NPN power transistor with similar voltage and current ratings, suitable for power applications.
  • TIP31C: This NPN transistor offers comparable performance and is commonly used in power switching circuits.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Not Recommended Ihs Manufacturer ROHM CO LTD
Part Package Code SC-62 Package Description ROHS COMPLIANT, MPT3, SC-62, 3 PIN
Pin Count 3 Reach Compliance Code not_compliant
ECCN Code EAR99 Samacsys Manufacturer ROHM Semiconductor
Case Connection COLLECTOR Collector Current-Max (IC) 1 A
Collector-Emitter Voltage-Max 80 V Configuration SINGLE
DC Current Gain-Min (hFE) 120 JESD-30 Code R-PSSO-F3
JESD-609 Code e2 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 2 W Qualification Status Not Qualified
Surface Mount YES Terminal Finish TIN COPPER
Terminal Form FLAT Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10 Transistor Application SWITCHING
Transistor Element Material SILICON Transition Frequency-Nom (fT) 100 MHz
Manufacturer ROHM Semiconductor Product Category Bipolar Transistors - BJT
RoHS Details Mounting Style SMD/SMT
Transistor Polarity NPN Collector- Emitter Voltage VCEO Max 80 V
Collector- Base Voltage VCBO 120 V Emitter- Base Voltage VEBO 5 V
Collector-Emitter Saturation Voltage 150 mV Maximum DC Collector Current 1 A
Pd - Power Dissipation 500 mW Gain Bandwidth Product fT 100 MHz
Minimum Operating Temperature - Maximum Operating Temperature + 150 C
Series 2SD1898 Brand ROHM Semiconductor
Continuous Collector Current 1 A DC Collector/Base Gain hfe Min 82
DC Current Gain hFE Max 390 Height 1.5 mm
Length 4.5 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 1000 Subcategory Transistors
Technology Si Width 2.5 mm
Unit Weight 0.004603 oz

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