• 2SD1782KT146R SMT3
2SD1782KT146R SMT3

2SD1782KT146R

500 mA, 80 V, 3-Pin SOT-346

Quantity Unit Price(USD) Ext. Price
5 $0.063 $0.32
50 $0.055 $2.75
150 $0.050 $7.50
500 $0.048 $24.00
3000 $0.045 $135.00
6000 $0.044 $264.00

Inventory:8,328

*The price is for reference only.
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Overview of 2SD1782KT146R

The 2SD1782KT146R is a silicon NPN epitaxial planar transistor designed for high-voltage amplifier applications. It features a VCEO of 400V and a continuous collector current of 1A, making it suitable for various voltage amplification circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector (C): Collects the current from the base region
  • Base (B): Controls the flow of current from the emitter to the collector
  • Emitter (E): Emits the majority charge carriers

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2SD1782KT146R transistor for a visual representation.

Key Features

  • NPN Epitaxial Planar Transistor: Silicon-based transistor with NPN polarity for efficient amplification.
  • High Voltage Capability: With a VCEO of 400V, this transistor can withstand high voltage levels in circuits.
  • Medium Power: The 2SD1782KT146R can handle a continuous collector current of 1A, suitable for medium-power applications.
  • Fast Switching Speed: Offers fast switching characteristics for quick response in amplification circuits.
  • Low Saturation Voltage: Provides low saturation voltage to minimize power dissipation and improve efficiency.

Note: For detailed technical specifications, please refer to the 2SD1782KT146R datasheet.

Application

  • High-Voltage Amplifiers: Ideal for use in high-voltage amplifier circuits for audio or signal processing.
  • Power Supplies: Can be incorporated in power supply circuits to handle medium-power loads.
  • Switching Circuits: Suitable for switching applications where fast response and low saturation voltage are required.

Functionality

The 2SD1782KT146R transistor is designed to amplify voltage signals efficiently in various electronic circuits. It provides reliable performance in high-voltage applications.

Usage Guide

  • Collector-Base Voltage: Connect the collector (C) and base (B) pins appropriately to ensure correct voltage amplification.
  • Emitter Connection: Connect the emitter (E) pin to complete the transistor circuit and allow current flow.
  • Operating Conditions: Ensure that the operating conditions, such as voltage and current levels, are within the specified limits.

Frequently Asked Questions

Q: What is the maximum voltage the 2SD1782KT146R can handle?
A: The 2SD1782KT146R has a VCEO rating of 400V, making it suitable for high-voltage applications.

Q: Is the 2SD1782KT146R suitable for audio amplifier circuits?
A: Yes, the 2SD1782KT146R can be used in audio amplifier circuits requiring high-voltage amplification.

Equivalent

For similar functionalities, consider these alternatives to the 2SD1782KT146R:

  • 2N3055: A popular NPN power transistor with high voltage and current ratings for power amplifier applications.
  • BD139: This NPN transistor offers medium power handling capability for various amplifier and switching circuits.

2SD1782KT146R

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer ROHM CO LTD
Part Package Code SC-59 Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3 Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 53 Weeks, 1 Day
Samacsys Manufacturer ROHM Semiconductor Collector Current-Max (IC) 0.5 A
Collector-Emitter Voltage-Max 80 V Configuration SINGLE
DC Current Gain-Min (hFE) 180 JESD-30 Code R-PDSO-G3
JESD-609 Code e1 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.2 W Qualification Status Not Qualified
Surface Mount YES Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10 Transistor Application AMPLIFIER
Transistor Element Material SILICON Transition Frequency-Nom (fT) 120 MHz
VCEsat-Max 0.5 V

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