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2SC5569-TD-E

NPN/PNP Single PCP with 50V and 7A rating, ideal for DC-DC converters

Quantity Unit Price(USD) Ext. Price
1 $0.409 $0.41
10 $0.336 $3.36
30 $0.307 $9.21
100 $0.268 $26.80
500 $0.252 $126.00
1000 $0.242 $242.00

Inventory:6,902

*The price is for reference only.
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Overview of 2SC5569-TD-E

The 2SC5569-TD-E is a high-frequency amplifier transistor designed for applications in radio frequency (RF) circuits.It offers high power gain and low noise characteristics,making it suitable for use in RF communication systems.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • E:Emitter
  • B:Base
  • C:Collector

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2SC5569-TD-E transistor for a visual representation.

Key Features

  • High Power Gain:The 2SC5569-TD-E provides a high power gain,ideal for amplifying weak RF signals.
  • Low Noise:The transistor exhibits low noise characteristics,enabling clear signal amplification without introducing additional noise.
  • High Frequency Operation:Designed for high-frequency RF applications,this transistor can operate in the RF frequency range effectively.
  • RF Amplification:Suitable for use in RF amplification circuits,such as in radio receivers and transmitters.

Note:For detailed technical specifications,please refer to the 2SC5569-TD-E datasheet.

Application

  • RF Communication Systems:The 2SC5569-TD-E is commonly used in RF communication systems,such as radio transceivers,wireless data transmission,and radar systems.
  • RF Signal Amplification:Ideal for amplifying RF signals in various applications where high power gain is required.
  • Wireless Networking:Suitable for use in wireless networking devices requiring RF signal amplification.

Functionality

The 2SC5569-TD-E transistor is designed to amplify RF signals with high power gain and low noise,ensuring optimal performance in RF communication systems.

Frequently Asked Questions

Q:What is the maximum frequency range supported by the 2SC5569-TD-E?
A:The 2SC5569-TD-E is designed for high-frequency RF applications and can support frequency ranges up to X GHz.

Q:Is the 2SC5569-TD-E suitable for low-power applications?
A:While the 2SC5569-TD-E offers high power gain,it may not be the most efficient choice for low-power applications due to its emphasis on amplification.

Equivalent

For similar functionalities,consider these alternatives to the 2SC5569-TD-E:

  • 2N5179:An RF amplifier transistor with comparable performance characteristics to the 2SC5569-TD-E.
  • MRF455:A high-power RF transistor suitable for amplification in RF communication systems.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SOT-89 / PCP-1 Case Outline 419AU
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 1000
ON Target Y Polarity NPN
Type Low VCE(sat) VCE(sat) Max (V) 0.24
IC Cont. (A) 7 VCEO Min (V) 50
VCBO (V) 100 VEBO (V) 6
VBE(sat) (V) 0.83 hFE Min 560
hFE Max 200 fT Min (MHz) 330
PTM Max (W) 1.3 Pricing ($/Unit) $0.2319

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