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2SB1188T100R

Bipolar Transistors - BJT PNP 32V 2A SO-89

Quantity Unit Price(USD) Ext. Price
5 $0.119 $0.60
50 $0.102 $5.10
150 $0.095 $14.25
1000 $0.087 $87.00
2000 $0.083 $166.00
5000 $0.081 $405.00

Inventory:6,620

*The price is for reference only.
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Overview of 2SB1188T100R

Featuring a compact SOT-89 case style with 3 pins, the 2SB1188T100R TRANSISTOR is a high-quality component ideal for various electronic projects. Its PNP polarity and -32V Collector Emitter Voltage ensure stable performance, while the Transition Frequency of 100MHz allows for fast signal switching. With a Power Dissipation of 500mW and a DC Current Gain of 82hFE, this transistor can handle currents up to -2A. Designed for automotive applications, it has an Operating Temperature Max of 150°C and meets industry standards for reliability

Key Features

  • 1) Low VCE(sat).
  • VCE(sat) = −0.5V (Typ.)
  • (IC/IB = −2A / −0.2A)
  • 2) Complements the 2SD1766 / 2SD1758 / 2SD1862

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer ROHM Product Category Transistors (BJT) - Single
Packaging Reel Unit-Weight SOT-89
Mounting-Style + 150 C Package-Case - 55 C
Configuration - 32 V Pd-Power-Dissipation PNP
Maximum Operating Temperature 2 A Operating temperature range 82
RoHS Details Mounting Style SMD/SMT
Transistor Polarity PNP Collector- Emitter Voltage VCEO Max 32 V
Collector- Base Voltage VCBO 40 V Emitter- Base Voltage VEBO 5 V
Collector-Emitter Saturation Voltage 500 mV Maximum DC Collector Current 2 A
Pd - Power Dissipation 2 W Gain Bandwidth Product fT 100 MHz
Minimum Operating Temperature - Brand ROHM Semiconductor
Continuous Collector Current - 2 A DC Collector/Base Gain hfe Min 82
DC Current Gain hFE Max 390 Height 1.5 mm
Length 4.5 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 1000 Subcategory Transistors
Technology Si Width 2.5 mm
Unit Weight 0.004603 oz

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