2SB1132T100Q
TO-243AA Package
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 1 | $0.372 | $0.37 |
| 200 | $0.148 | $29.60 |
| 500 | $0.143 | $71.50 |
| 1000 | $0.142 | $142.00 |
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Part Number : 2SB1132T100Q
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Package/Case : MPT3
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Brand : Rohm Semiconductor
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Components Classification : Single Bipolar Transistors
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Datesheet : 2SB1132T100Q DataSheet (PDF)
Overview of 2SB1132T100Q
The PNP transistor, 2SB11-32T100Q, is a high-performance component designed to operate reliably in demanding applications. Its collector-emitter voltage rating of -32V and power dissipation capacity of 500mW make it well-suited for use in amplifiers, switches, and other devices that require high current handling capabilities. With a DC collector current rating of -1A and DC current gain hFE of 82, this transistor provides efficient signal amplification while maintaining stability. Its compact SOT-89 package makes it ideal for space-constrained designs
Key Features
- 1) Low VCE(sat).
- VCE(sat)= -0.2V(Typ.)
- (IC / IB = -500mA / -50mA)
- 2) Compliments 2SD1664 / 2SD1858
- Structure
- Epitaxial planar type
- PNP silicon transistor
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Pbfree Code | Yes | Rohs Code | Yes |
| Part Life Cycle Code | Obsolete | Ihs Manufacturer | ROHM CO LTD |
| Part Package Code | SC-62 | Package Description | SMALL OUTLINE, R-PSSO-F3 |
| Pin Count | 3 | Reach Compliance Code | compliant |
| ECCN Code | EAR99 | HTS Code | 8541.29.00.75 |
| Samacsys Manufacturer | ROHM Semiconductor | Case Connection | COLLECTOR |
| Collector Current-Max (IC) | 1 A | Collector-Base Capacitance-Max | 30 pF |
| Collector-Emitter Voltage-Max | 32 V | Configuration | SINGLE |
| DC Current Gain-Min (hFE) | 120 | JESD-30 Code | R-PSSO-F3 |
| JESD-609 Code | e2 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Temperature-Max | 150 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | PNP | Power Dissipation Ambient-Max | 2 W |
| Power Dissipation-Max (Abs) | 2 W | Qualification Status | Not Qualified |
| Surface Mount | YES | Terminal Finish | TIN COPPER |
| Terminal Form | FLAT | Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 10 | Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON | Transition Frequency-Nom (fT) | 150 MHz |
| VCEsat-Max | 0.5 V |
Warranty & Returns
Warranty, Returns, and Additional Information
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