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2SA1576AT106R

ROHM - 2SA1576AT106R - Bipolar (BJT) Single Transistor, PNP, -50 V, 140 MHz, 200 mW, -150 mA, 120 hFE

Quantity Unit Price(USD) Ext. Price
20 $0.020 $0.40
200 $0.017 $3.40
600 $0.016 $9.60
3000 $0.015 $45.00
9000 $0.014 $126.00
21000 $0.013 $273.00

Inventory:7,444

*The price is for reference only.
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Overview of 2SA1576AT106R

Product 2SA1576AT106R is a PNP transistor with a collector-emitter voltage of -50V and a collector current of -150mA. With a power dissipation of 200mW, this transistor is designed for applications requiring a transition frequency of 140MHz. The DC current gain is 120hFE, making it suitable for various electronic circuits where precise amplification is necessary

Key Features

  • 1) General Purpose.
  • 2) Complementary NPN Types : 2SC5658 (VMT3) / 2SC4617EB (EMT3F) / 2SC4617 (EMT3) / 2SC4081UB (UMT3F) / 2SC4081 (UMT3) / 2SC2412 (SMT3)
  • 3) Complex transistors : EMT1 / EMT2 / EMT3 (EMT6) / UMT1N / UMT2N (UMT6) / IMT1A / IMT2A / IMT3A (SMT6)
  • 4) Lead Free/RoHS Compliant.

Application

AMPLIFIER

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer ROHM CO LTD
Part Package Code SC-70 Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3 Reach Compliance Code compliant
ECCN Code EAR99 Samacsys Manufacturer ROHM Semiconductor
Collector Current-Max (IC) 0.15 A Collector-Emitter Voltage-Max 50 V
Configuration SINGLE DC Current Gain-Min (hFE) 180
JESD-30 Code R-PDSO-G3 JESD-609 Code e1
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP Power Dissipation-Max (Abs) 0.2 W
Qualification Status Not Qualified Surface Mount YES
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu) Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 10
Transistor Application AMPLIFIER Transistor Element Material SILICON
Transition Frequency-Nom (fT) 140 MHz VCEsat-Max 0.5 V

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