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2N7002W

Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-323 T/R

Quantity Unit Price(USD) Ext. Price
20 $0.021 $0.42
200 $0.018 $3.60
600 $0.016 $9.60
3000 $0.013 $39.00
9000 $0.012 $108.00
21000 $0.011 $231.00

Inventory:5,377

*The price is for reference only.
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Overview of 2N7002W

The 2N7002W is a N-channel MOSFET transistor designed for various switching and amplification applications in electronic circuits. This transistor offers low on-resistance and fast switching speeds, making it suitable for use in power management, voltage regulation, and signal amplification.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • VSS: Ground connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2N7002W MOSFET for a visual representation.

Key Features

  • Low On-Resistance: The 2N7002W features low on-resistance, minimizing power dissipation and improving efficiency in switching applications.
  • Fast Switching Speeds: With its fast switching characteristics, this MOSFET enables rapid response times in electronic circuits.
  • Enhanced Voltage Endurance: The 2N7002W can withstand relatively high voltages, making it suitable for use in various voltage regulation and power management circuits.
  • Compact SOT-23 Package: Available in a small SOT-23 package, the 2N7002W offers space-saving benefits and ease of integration into compact electronic designs.
  • Wide Operating Temperature Range: This MOSFET operates over a wide temperature range, ensuring reliable performance in diverse environmental conditions.

Note: For detailed technical specifications, please refer to the 2N7002W datasheet.

Application

  • Switching Circuits: Ideal for use in switching circuits for power control, signal routing, and digital logic applications.
  • Amplification: Suitable for signal amplification in audio amplifiers, sensor interfaces, and other analog circuitry.
  • Power Management: Used in power management circuits for voltage regulation, current limiting, and battery charging applications.

Functionality

The 2N7002W N-channel MOSFET transistor provides efficient switching and amplification capabilities for various electronic applications. Its low on-resistance and fast switching speeds make it a versatile component in circuit design.

Usage Guide

  • Connection: Connect the Gate (G) pin to the control signal, Drain (D) pin to the load or output, and Source (S) pin to the ground reference.
  • Voltage Ratings: Ensure that the voltage applied across the Drain-Source terminals does not exceed the specified maximum ratings.
  • Drive Signal: Apply appropriate voltage levels to the Gate (G) pin to control the switching behavior of the MOSFET.

Frequently Asked Questions

Q: What is the maximum voltage rating for the 2N7002W?
A: The 2N7002W can typically withstand voltages up to 60V when used within its specified operating conditions.

Q: Can the 2N7002W be used for high-frequency switching applications?
A: Yes, the 2N7002W offers fast switching speeds and can be utilized in high-frequency switching circuits, provided that proper design considerations are taken into account.

Equivalent

For similar functionalities, consider these alternatives to the 2N7002W:

  • BS170: Another N-channel MOSFET transistor with similar characteristics and performance to the 2N7002W, suitable for various switching and amplification applications.
  • IRLML2502: A power MOSFET transistor offering low on-resistance and fast switching speeds, compatible with the SOT-23 package.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer onsemi Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case SOT-323-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 115 mA
Rds On - Drain-Source Resistance 7.5 Ohms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V Qg - Gate Charge -
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 200 mW Channel Mode Enhancement
Series 2N7002W Brand onsemi / Fairchild
Configuration Single Height 1 mm
Length 2 mm Product MOSFET Small Signals
Product Type MOSFET Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 12.5 ns Typical Turn-On Delay Time 5.85 ns
Width 1.25 mm Unit Weight 0.000212 oz

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