• 2N6849 TO-205AF
2N6849 TO-205AF

2N6849

Advanced P-channel design delivers exceptional voltage handling capabilities and spee

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Overview of 2N6849

The 2N6849 is a P-channel JFET (junction field-effect transistor) designed for various analog and switching applications. This transistor features high input impedance, low noise, and low leakage current, making it suitable for amplification and signal processing.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • D: Drain
  • S: Source
  • G: Gate

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2N6849 transistor for a visual representation.

Key Features

  • P-Channel JFET: The 2N6849 is a P-channel JFET suitable for low-power analog applications.
  • High Input Impedance: This transistor offers high input impedance, ideal for impedance matching and signal amplification.
  • Low Noise: With low noise characteristics, the 2N6849 is suitable for signal processing where noise is a concern.
  • Low Leakage Current: The 2N6849 has low leakage current, ensuring minimal power dissipation in off-state conditions.

Note: For detailed technical specifications, please refer to the 2N6849 datasheet.

Application

  • Amplification: Ideal for low-power amplification applications in audio and instrumentation systems.
  • Signal Processing: Suitable for use in signal processing circuits where low noise is critical.
  • Switching Circuits: Can be used in switching applications where high input impedance is required.

Functionality

The 2N6849 P-channel JFET is designed to provide high input impedance and low noise characteristics for efficient signal processing and amplification tasks.

Usage Guide

  • Connection: Connect the source (S), gate (G), and drain (D) pins according to the circuit requirements.
  • Biasing: Apply the appropriate bias voltage to the gate and source terminals for proper operation.
  • Signal Handling: Utilize the 2N6849 for amplifying or processing analog signals within specified operating conditions.

Frequently Asked Questions

Q: Can the 2N6849 be used in high-frequency applications?
A: While primarily designed for low-power analog applications, the 2N6849 may have limitations in high-frequency performance. Consider alternative components for high-frequency requirements.

Equivalent

For similar functionalities, consider these alternatives to the 2N6849:

  • 2N5486: Another P-channel JFET with similar characteristics suitable for analog applications.
  • J175: A P-channel JFET offering comparable performance and features to the 2N6849.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Configuration Discrete ID max -6.5 A
Package TO-205AF Polarity P
Qualification DLA VBRDSS min -100.0 V
QPL Part Number 2N6849 RDS (on) max 300.0 mΩ
Language SPICE Product Category High reliability power MOSFETs

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