• 2N5886 TO-204-2
2N5886 TO-204-2

2N5886

Trans GP BJT NPN 80V 25A 200000mW 3-Pin(2+Tab) TO-3 Tray

Quantity Unit Price(USD) Ext. Price
1 $165.260 $165.26
200 $63.954 $12,790.80
500 $61.706 $30,853.00
1000 $60.596 $60,596.00

Inventory:7,846

*The price is for reference only.
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Overview of 2N5886

The 2N5886 is a high-power NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplifier applications. It offers high current and voltage ratings, making it suitable for various power electronics projects.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter (E): Connects to the ground or common reference point.
  • Base (B): Controls the input current to regulate the transistor's operation.
  • Collector (C): Connects to the load or power supply.

Circuit Diagram

Include a circuit diagram illustrating the use of the 2N5886 transistor in a typical switching or amplification circuit.

Key Features

  • High Power Capability: The 2N5886 can handle high power levels, making it suitable for power applications.
  • High Current and Voltage Ratings: With high current and voltage ratings, this transistor can support demanding loads.
  • Low Saturation Voltage: Offers low saturation voltage for efficient switching operations.
  • Wide Operating Temperature Range: Operates effectively across a wide temperature range, ideal for various environments.
  • Robust Construction: The 2N5886 is built with robust materials to ensure durability and reliability.

Note: For detailed technical specifications, please refer to the 2N5886 datasheet.

Application

  • Power Amplification: Suitable for power amplifier circuits in audio or RF applications.
  • Switching Circuits: Used in high-power switching applications for efficient control of loads.
  • Motor Control: Can be employed in motor control circuits for driving high-current loads.

Functionality

The 2N5886 transistor is designed to amplify or switch electrical signals with high power requirements. It provides reliable performance in various electronic circuits.

Usage Guide

  • Connection: Connect the emitter to the ground, base to the input signal, and collector to the load.
  • Voltage and Current: Ensure that the voltage and current levels do not exceed the ratings specified in the datasheet.

Frequently Asked Questions

Q: Is the 2N5886 suitable for high-frequency applications?
A: The 2N5886 is more suited for low to moderate frequency applications due to its characteristics.

Equivalent

For similar functionalities, consider these alternatives to the 2N5886:

  • 2N5884: A comparable high-power NPN transistor with similar characteristics to the 2N5886.
  • MJL3281A: This NPN transistor offers high power handling capabilities for demanding applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer onsemi Product Category Bipolar Transistors - BJT
RoHS N Mounting Style Through Hole
Package / Case TO-204-2 Transistor Polarity NPN
Configuration Single Collector- Emitter Voltage VCEO Max 80 V
Collector- Base Voltage VCBO 80 V Emitter- Base Voltage VEBO 5 V
Collector-Emitter Saturation Voltage 1 V Maximum DC Collector Current 25 A
Pd - Power Dissipation 200 W Gain Bandwidth Product fT 4 MHz
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 150 C
Brand onsemi Continuous Collector Current 25 A
DC Collector/Base Gain hfe Min 35 Height 8.51 mm
Length 39.37 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 100 Subcategory Transistors
Technology Si Width 26.67 mm
Unit Weight 0.056438 oz

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