2N5415
Trans GP BJT PNP 200V 1A 1000mW 3-Pin TO-39 Bag
Inventory:6,365
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Part Number : 2N5415
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Package/Case : TO-5-3
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Brand : Microchip
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Components Classification : Single Bipolar Transistors
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Datesheet : 2N5415 DataSheet (PDF)
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | Bipolar Transistors - BJT | RoHS | N |
Mounting Style | Through Hole | Package / Case | TO-5-3 |
Transistor Polarity | PNP | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 200 V | Collector- Base Voltage VCBO | 200 V |
Emitter- Base Voltage VEBO | 4 V | Collector-Emitter Saturation Voltage | 2.5 V |
Maximum DC Collector Current | 1 A | Pd - Power Dissipation | 1 W |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 200 C |
Brand | Microchip Technology | Continuous Collector Current | 1 A |
DC Collector/Base Gain hfe Min | 15 | DC Current Gain hFE Max | 120 |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 1 |
Subcategory | Transistors | Technology | Si |
Unit Weight | 0.014110 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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Payment
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