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2N3019

Trans GP BJT NPN 80V 1A 800mW 3-Pin TO-39 Bag

Inventory:3,570

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Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS N
Mounting Style Through Hole Package / Case TO-5-3
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 80 V Collector- Base Voltage VCBO 140 V
Emitter- Base Voltage VEBO 7 V Collector-Emitter Saturation Voltage 500 mV
Maximum DC Collector Current 1 A Pd - Power Dissipation 800 mW
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 200 C
Brand Microchip Technology Continuous Collector Current 1 A
DC Collector/Base Gain hfe Min 15 DC Current Gain hFE Max 300
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 1
Subcategory Transistors Technology Si
Unit Weight 0.101682 oz

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Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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